Owner's manual

DMC3028LSD
Document Revision: 4
7 of 11
www.diodes.com
July 2009
© Diodes Incorporated
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Diodes Incorporated
DMC3028LSD
Electrical Characteristics – Q2 P-Channel @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-30
V
I
D
= -250μA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
-0.5
μA
V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
±100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-1.0
-3.0 V
I
D
= -250μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 8)
R
DS (ON)
0.025
V
GS
= -10V, I
D
= -7.1A
0.041
V
GS
= -4.5V, I
D
= -5.5A
Forward Transconductance (Notes 8 & 9)
g
fs
18.6
S
V
DS
= -15V, I
D
= -7.1A
Diode Forward Voltage (Note 8)
V
SD
-0.80 -1.2 V
I
S
= -1.7A, V
GS
= 0V
Reverse recovery time (Note 9)
t
rr
16.2
ns
I
S
= -2.2A, di/dt= 100A/μs
Reverse recovery charge (Note 9)
Q
rr
10
nC
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
1678
pF
V
DS
= -15V, V
GS
= 0V
f= 1MHz
Output Capacitance
C
oss
303
pF
Reverse Transfer Capacitance
C
rss
178
pF
Total Gate Charge
Q
g
16.4
nC
V
DS
= -15V, V
GS
= -4.5V
I
D
= -7.1A
Total Gate Charge
Q
g
31.6
nC
V
DS
= -15V, V
GS
= -10V
I
D
= -7.1A
Gate-Source Charge
Q
gs
4.3
nC
Gate-Drain Charge
Q
gd
6.2
nC
Turn-On Delay Time (Note 10)
t
D(on)
3.5
ns
V
DD
= -15V, V
GS
= -10V
I
D
= -1A, R
G
6.0Ω
Turn-On Rise Time (Note 10)
t
r
4.9
ns
Turn-Off Delay Time (Note 10)
t
D(off)
44
ns
Turn-Off Fall Time (Note 10)
t
f
28
ns
Notes: 8. Measured under pulsed conditions. Pulse width 300μs; duty cycle 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.