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DMC3028LSDX

Docume nt num be r: DS36210 Rev. 3 - 2

1 of 9

www.diodes.com

June 2013

DMC3028LSDX

ADVANCE INFORMATION

ADVANCED INFORMATION

COMPLEMENTA RY PA IR ENHANCEMENT MODE MOSFET

Product Summa r y

Device

(BR)DSS

DS(ON)

max

= +25°C

Q1 30V

27mΩ @ V

= 10V

7.2A

35mΩ @ V

= 4.5V

6.0A

Q2 -30V

25mΩ @ V

= -10V

-7.6A

41mΩ @ V

= -4.5V

-6.2A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

DS(ON)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Applications

• DC-DC Converters

• Power Management Functions

•

Backlighting

Features an d Benef its

• Low Input Capacitance

• Low On-Resistance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plast ic, “Green” Molding Com pound.

UL Flammabilit y Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connecti ons: See Diagram

• Terminals: Finish – Tin Finish anneal ed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weigh t: 0. 074 gram s (approxi mate)

Ordering Information (Note 4)

Part Number

Case

Packaging

DMC3028LSDX-13 SO-8 2,500/Tape & Reel

Notes: 1. No purposely added lead. Full y EU D irecti v e 200 2/95/EC (RoHS ) & 2011/ 65/EU (RoHS 2) com pli a nt.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead -free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Top View

Pin Configuration

Equivalent Circui t

D1S1

Top View

Logo

Part no

Year: “11” = 2011

3028SDX

Xth week: 01 ~ 53

Summary of content (9 pages)

PAGE 1
DMC3028LSDX COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET ADVANCE INFORMATION ADVANCED INFORMATION Product Summary Device V(BR)DSS Q1 30V Q2 -30V Features and Benefits RDS(ON) max ID max TA = +25°C 27mΩ @ VGS = 10V 7.2A 35mΩ @ VGS = 4.5V 6.0A 25mΩ @ VGS = -10V -7.6A 41mΩ @ VGS = -4.5V -6.2A • • • • • • Low Input Capacitance Low On-Resistance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
PAGE 2
DMC3028LSDX ADVANCE INFORMATION ADVANCED INFORMATION Maximum Ratings – Q1 and Q2 (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Symbol VDSS VGSS Q1 30 ±20 Q2 -30 ±20 Units V V Steady State TA = +25°C TA = +70°C ID 5.5 4.1 -5.8 -4.3 A t<10s TA = +25°C TA = +70°C ID 7.2 5.7 -7.6 -6.1 A IS IDM 2.2 40 -2.
PAGE 3
DMC3028LSDX ADVANCE INFORMATION ADVANCED INFORMATION Electrical Characteristics – Q2 (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30       -1 ±100 µA VGS(th) Static Drain-Source On-Resistance RDS (ON) VSD -1     21 29 -0.7 -3 25 41 -1.
PAGE 4
DMC3028LSDX N-Channel – Q1 30.0 30 VGS = 10V VDS = 5V 25 VGS = 5.0V VGS = 4.0V 20.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25.0 VGS = 3.0V VGS = 4.5V 15.0 10.0 5.0 20 VGS = 150°C 15 VGS = 125°C 10 VGS = 85°C 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic VGS = -55°C 0.05 0.045 0.04 0.035 0.03 0.025 VGS = 4.5V 0.02 0.015 VGS = 10V 0.01 0.005 0.00 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs.
PAGE 5
30 2.5 25 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE 3 2 ID = 1mA 1.5 ID = 250µA 1 0.5 20 TA = 25°C 15 10 5 0 -50 0 75 100 125 150 0 25 50 TA, AMBIENT TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature -25 10000 0 0.2 0.4 0.6 0.8 1 1.2 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs.
PAGE 6
DMC3028LSDX P-Channel – Q2 20 20 VGS = -10V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 15 VGS = -5.0V VGS = -4.5V VGS = -4.0V 10 VGS = -3.5V VGS = -3.0V 5 15 10 5 TA = 150°C TA = 125°C VGS = -2.5V 0 1 2 3 4 -V DS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.05 0.04 0.03 VGS = -4.5V 0.02 VGS = -10V 0.01 0 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs.
PAGE 7
VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω) 3.0 0.05 0.04 VGS = -5.0V ID = -5.0A 0.03 VGS = -10V ID = -10A 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 On-Resistance Variation with Temperature 2.5 2.0 -ID = 1mA 1.5 -ID = 250µA 1.0 0.5 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs.
PAGE 8
DMC3028LSDX Package Outline Dimensions 0.254 ADVANCE INFORMATION ADVANCED INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 Θ 0° 8° All Dimensions in mm D Suggested Pad Layout Please see AP02001 at http://www.diodes.
PAGE 9
DMC3028LSDX ADVANCE INFORMATION ADVANCED INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).