User Manual

DMC3028LSDX
Docume nt num be r: DS36210 Rev. 3 - 2
2 of 9
www.diodes.com
June 2013
© Diodes Incorporated
DMC3028LSDX
ADVANCE INFORMATION
ADVANCED INFORMATION
Maximum Ratings – Q1 and Q2 (@T
A
= +25°C, unless otherwise specified.)
Thermal Characteristics (@T
A
= +25°C, unless otherwise specifi ed. )
Characteristic Symbol Value Units
Total Power Dissipation (Not e 5)
T
A
= +25°C
P
D
1.2
W
T
A
= +70°C
0.75
Thermal Res istance, Junction to Ambient (Note 5)
Steady state
R
• JA
108
°C/W
t<10s 65
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.5
W
T
A
= +70°C
0.95
Thermal Res istance, Junction to Ambient (Note 6)
Steady state
R
Θ
JA
85
°C/W
t<10s
50
Thermal Res istance, Junction to Case (Note 6)
R
Θ
JC
14.5
Operating and Storage Tem perature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics – Q1 (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CH ARACTERISTICS (Note 8)
Drain-Source B reakdown Volt age
BV
DSS
30
 
V
V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
 
1
µA
V
DS
= 24V, V
GS
= 0V
Gate-Source Leakage
I
GSS
  ±100
nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTI CS (Note 8)
Gate Threshold Voltage
V
GS(th)
1

3 V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance
R
DS (ON)

19 27
mΩ
V
GS
= 10V, I
D
= 6A

22 35
V
GS
= 4.5V , I
D
= 5A
Diode Forward Voltage
V
SD

0.7 1.2 V
V
GS
= 0V, I
S
= 1.3A
DYNAMIC CH ARACTERISTICS (Note 9)
Input Capacitance
C
iss

641

pF
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss

66

Reverse Transfer Capacitance
C
rss

51

Gate Resistance
R
G

2.2
 Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V) Q
g

6

nC
V
DS
= 15V, I
D
= 10A
Total Gate Charge (V
GS
= 10V) Q
g

13.2

Gate-Source Charge
Q
gs

1.7

Gate-Drain Charge
Q
gd

2.2

Turn-On Delay Time
t
D(on)

3.3

nS
V
GS
= 10V, V
DD
= 15V, R
G
= 6Ω,
I
D
= 1A
Turn-On Rise Time
t
r

4.4

Turn-Off Delay Time
t
D(off)

22.3

Turn-Off Fall Time
t
f

5.3

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mount ed on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= +25°C
8. Short duration pulse test used to minimize self-he atin g eff e ct.
9. Guaranteed by design. Not subject to product testing.
Characteristic Symbol Q1 Q2 Units
Drain-Source V olt age
V
DSS
30 -30 V
Gate-Source Vol tage
V
GSS
±20 ±20 V
Continuous Drain Current (Note 5) V
GS
=10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
5.5
4.1
-5.8
-4.3
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
7.2
5.7
-7.6
-6.1
A
Maximum Body Diode Forward Current (Note 5)
I
S
2.2
-2.2
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
40 -30 A