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DMC3032LSD

Document number: DS32153 Rev. 1 - 2

1 of 8

www.diodes.com

May 2010

DMC3032LSD

NEW PRODUCT

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• N-Channel: 32mΩ @ 10V

46mΩ @ 4.5V

• P-Channel: 39mΩ @ 10V

53mΩ @ 4.5V

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Complementary Pair MOSFET

• Lead Free/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 6

• Ordering Information: See Page 6

• Weight: 0.072 grams (approximate)

Maximum Ratings N-CHANNEL – Q1 @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Drain-Source Voltage

DSS

30 V

Gate-Source Voltage

GSS

±20 V

Continuous Drain Current (Note 3)

Steady

State

= 25°C

= 85°C

8.1

5.1

Pulsed Drain Current (Note 4)

25 A

Maximum Ratings P-CHANNEL – Q2 @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Drain-Source Voltage

DSS

-30 V

Gate-Source Voltage

GSS

±20 V

Continuous Drain Current (Note 3)

Steady

State

= 25°C

= 85°C

-7.0

-4.5

Pulsed Drain Current (Note 4)

-25 A

Thermal Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation (Note 3)

2.5 W

Thermal Resistance, Junction to Ambient (Note 3)

θJA

50 °C/W

Operating and Storage Temperature Range

, T

STG

-55 to +150 °C

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, with minimum recommended pad layout.

4. Repetitive rating, pulse width limited by junction temperature.

SO-8

Top View

N-Channel MOSFET P-Channel MOSFET

Summary of content (8 pages)

PAGE 1
DMC3032LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • NEW PRODUCT • • • • • • • • Low On-Resistance N-Channel: 32mΩ @ 10V 46mΩ @ 4.5V P-Channel: 39mΩ @ 10V 53mΩ @ 4.5V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Lead Free/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • • • • Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound.
PAGE 2
DMC3032LSD Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 1 RDS (ON) - |Yfs| VSD - 2.1 32 46 1.0 V Static Drain-Source On-Resistance 1.45 23 32 7.6 0.7 VDS = VGS, IC = 250μA VGS = 10V, IC = 7A VGS = 4.5V, IC = 5.
PAGE 3
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1 VGS = 2.5V 0.1 VGS = 4.5V VGS = 8.0V 0.01 0.1 1 10 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 4.5V 1.3 1.1 VGS = 4.5V ID = 5.0A 0.9 VGS = 10V ID = 10A 0.5 -50 TA = 150°C 0.06 TA = 125°C T A = 85°C 0.04 TA = 25°C TA = -55°C 0.02 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.5 0.7 0.08 100 1.
PAGE 4
DMC3032LSD IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) 1,000 NEW PRODUCT C, CAPACITANCE (pF) f = 1MHz Ciss 100 Coss Crss 10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance Electrical Characteristics P-CHANNEL 10,000 1,000 T A = 150°C TA = 125°C 100 10 TA = 85°C T A = 25°C TA = -55°C 1 0 30 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs.
PAGE 5
DMC3032LSD 20 20 VGS = 10V VDS = 5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 15 VGS = 3.5V 10 VGS = 3.0V 5 15 10 5 TA = 150°C TA = 125°C TA = 85°C VGS = 2.5V 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 Typical Output Characteristics 0.08 0.06 VGS = 4.5V VGS = 10V 0.02 0 0 5 10 15 ID, DRAIN-SOURCE CURRENT (A) Fig. 13 Typical On-Resistance vs. Drain Current and Gate Voltage 1.3 1.1 VGS = 10V ID = 10A 0.9 VGS = 4.
PAGE 6
DMC3032LSD 20 ID = 1mA IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 16 2.0 ID = 250µA 1.5 1.0 0.5 12 8 4 0 0.4 10,000 10,000 IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) f = 1MHz 1,000 Ciss Coss 100 10 Crss 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 19 Typical Capacitance Ordering Information 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 18 Diode Forward Voltage vs.
PAGE 7
DMC3032LSD 0.254 Package Outline Dimensions E1 E NEW PRODUCT A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm Suggested Pad Layout X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMC3032LSD Document number: DS32153 Rev. 1 - 2 7 of 8 www.diodes.
PAGE 8
DMC3032LSD IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).