User Manual

DMC3032LSD
Document number: DS32153 Rev. 1 - 2
2 of 8
www.diodes.com
May 2010
© Diodes Incorporated
DMC3032LSD
NEW PRODUCT
Electrical Characteristics N-CHANNEL – Q1 @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
30 - - V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - 1.0
μA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- - ±100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS
(
th
)
1 1.45 2.1 V
V
DS
= V
GS
, I
C
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
-
23 32
mΩ
V
GS
= 10V, I
C
= 7A
32 46
V
GS
= 4.5V, I
C
= 5.6A
Forward Transfer Admittance
|Y
fs
|
- 7.6 - S
V
DS
= 5V, I
C
= 7A
Diode Forward Voltage (Note 5)
V
SD
- 0.7 1.0 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
C
iss
- 404.5 -
pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 51.8 -
pF
Reverse Transfer Capacitance
C
rss
- 45.1 -
pF
Gate Resistance
R
g
- 1.5 -
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (10V)
Q
g
- 9.2 -
nC
V
GS
= 10V, V
DS
= 15V,
I
D
= 5.8A
Gate-Source Charge
Q
g
s
- 1.2 -
nC
Gate-Drain Charge
Q
g
d
- 1.8 -
nC
Turn-On Delay Time
t
D
(
on
)
-
3.4
- ns
V
GS
= 10V, V
DS
= 15V,
R
G
= 3Ω, R
L
= 2.6Ω
Turn-On Rise Time
t
r
-
6.18
- ns
Turn-Off Delay Time
t
D
(
off
)
-
13.92
- ns
Turn-Off Fall Time
t
f
-
2.84
- ns
0
4
8
12
16
20
012345
Fig. 1 Typical Output Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
DS
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V = 2.0V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 4.5V
GS
V = 8.0V
GS
0
4
8
12
16
20
01 2 34
Fig. 2 Typical Transfer Characteristics
V , GATE SOURCE VOLTAGE (V)
GS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
V = 5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A