User Manual

DMC3032LSD
Document number: DS32153 Rev. 1 - 2
4 of 8
www.diodes.com
May 2010
© Diodes Incorporated
DMC3032LSD
NEW PRODUCT
0 5 10 15 20 25 30
Fig. 9 Typical Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
10
100
1,000
C
,
C
A
P
A
C
I
T
A
N
C
E (p
F
)
f = 1MHz
C
iss
C
oss
C
rss
0 5 10 15 20 25 30
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
10,000
I, D
R
AIN-S
O
U
R
C
E LEAKA
G
E
C
U
R
R
EN
T
(nA)
DSS
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
Electrical Characteristics P-CHANNEL @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
-30 - - V
V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - -1.0
μA
V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- - ±100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS
(
th
)
-1 -1.7 -2.2 V
V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance
R
DS (ON)
-
30 39
mΩ
V
GS
= -10V, I
D
= -4.3A
42 53
V
GS
= -4.5V, I
D
= -3.7A
Forward Transfer Admittance
|Y
fs
|
- 7 - S
V
DS
= -5V, I
D
= -4.3A
Diode Forward Voltage (Note 5)
V
SD
- -0.75 -1.0 V
V
GS
= 0V, I
S
= -1.7A
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
C
iss
- 1002 -
pF
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 125 -
pF
Reverse Transfer Capacitance
C
rss
- 118 -
pF
Gate Resistance
R
g
- 13 -
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (4.5V)
Q
g
- 10.1 -
nC
V
GS
= -4.5V/-10V, V
DS
= -15V,
I
D
= -6A
Total Gate Charge (10V)
Q
g
- 21.1 -
nC
Gate-Source Charge
Q
g
s
- 2.8 -
nC
Gate-Drain Charge
Q
g
d
- 3.2 -
nC
Turn-On Delay Time
t
D
(
on
)
-
10.1
- ns
V
GS
= -10V, V
DS
= -15V,
R
G
= 6Ω , I
D
= -1A
Turn-On Rise Time
t
r
-
6.5
- ns
Turn-Off Delay Time
t
D
(
off
)
-
50.1
- ns
Turn-Off Fall Time
t
f
-
22.2
- ns
Notes: 5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.