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DMC4029SSD

Document number: DS36350 Rev. 3 - 2

1 of 8

www.diodes.com

March 2014

DMC4029SSD

ADVANCE INFORMATION

NEW PRODUCT

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Product Summary

Device

(BR)DSS

DS(on) max

= +25°C

Q2 40V

24mΩ @ V

= 10V

9.0A

32mΩ @ V

= 4.5V

7.8A

Q1 -40V

45mΩ @ V

= -10V

-6.5A

55mΩ @ V

= -4.5V

-5.9A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

DS(on)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Applications

• DC-DC Converters

• Power Management Functions

• Backlighting

Features and Benefits

• Low Input Capacitance

• Low On-Resistance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – Tin Finish annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.074 grams (approximate)

Ordering Information (Note 4 & 5)

Part Number Compliance Case Packaging

DMC4029SSD-13 Standard SO-8 2,500/Tape & Reel

DMC4029SSDQ-13 Automotive SO-8 2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the

same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Top View

Logo

Part no.

Year: “13” = 2013

1 4

8 5

C4029SD

Y W

Xth week: 01 ~ 53

TOP VIEW

Internal Schematic

N-Channel MOSFET

P-Channel MOSFET

Summary of content (8 pages)

PAGE 1
DMC4029SSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION NEW PRODUCT Device RDS(on) max V(BR)DSS Q2 40V Q1 -40V Features and Benefits 24mΩ @ VGS = 10V 32mΩ @ VGS = 4.5V 45mΩ @ VGS = -10V 55mΩ @ VGS = -4.5V ID TA = +25°C 9.0A 7.8A -6.5A -5.9A • Low Input Capacitance • Low On-Resistance • Fast Switching Speed • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free.
PAGE 2
DMC4029SSD Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION NEW PRODUCT Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 7) VGS = 10V Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C Maximum Body Diode Forward Current (Note 7) Pulsed Drain Current (10µs pulse, duty cycle = 1%) ID Value_Q2 40 ±20 7.0 5.6 Value_Q1 -40 ±20 -5.1 -4.1 9.0 7.2 2.5 70 -6.5 -5.2 -2.
PAGE 3
DMC4029SSD Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -40 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1 ±100 V µA nA VGS = 0V, ID = -250µA VDS = -40V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS(ON) VSD ⎯ 33 40 -0.7 -3.0 45 55 -1.0 V Static Drain-Source On-Resistance -1.0 ⎯ ⎯ ⎯ VDS = VGS, ID = -250µA VGS = -10V, ID = -5A VGS = -4.
PAGE 4
DMC4029SSD 0.2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.022 VGS = 4.5V 0.02 0.018 0.016 VGS = 10V 0.014 0.012 0.01 0.008 0 5 10 15 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.18 0.16 ID = 5.0A 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 20 0.05 3 4 5 6 7 -VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristic 8 2 0.045 0.04 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 4.5V TA = 150°C 0.035 T A = 125°C 0.
PAGE 5
DMC4029SSD 30 IS, SOURCE CURRENT (A) 20 T A = 150°C 15 TA = 125°C TA = 85°C 10 TA = 25°C TA = -55°C 5 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t) = r(t) * RθJA RθJA = 94°C/W Duty Cycle, D = t1/ t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.
PAGE 6
DMC4029SSD RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.18 0.16 0.14 0.12 0.1 0.08 0.06 VGS = -4.5V 0.04 VGS = -10V 0.02 0 0 5 10 15 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 20 VGS = -10V ID = -10A 1.5 VGS = -4.5V ID = -5A 1.0 0.5 0 -50 RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) VGS = -2.5V 2.0 0.1 VGS = -4.5V 0.09 0.08 TA = 150°C 0.07 T A = 125°C 0.
PAGE 7
D = 0.7 r(t), TRANSIENT THERMAL RESISTANCE D = 0.5 D = 0.3 D = 0.1 D = 0.9 D = 0.05 D = 0.02 D = 0.01 D = 0.005 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Figure 9 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 0.
PAGE 8
DMC4029SSD ADVANCE INFORMATION NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).