Owner manual
DMC4029SSD
Document number: DS36350 Rev. 3 - 2
3 of 8
www.diodes.com
March 2014
© Diodes Incorporated
DMC4029SSD
ADVANCE INFORMATION
NEW PRODUCT
Electrical Characteristics P-Channel Q1 (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
-40
⎯ ⎯
V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS
⎯ ⎯
-1 µA
V
DS
= -40V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯ ⎯
±100
nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS
(
th
)
-1.0
⎯
-3.0 V
V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance
R
DS(ON)
⎯
33 45
mΩ
V
GS
= -10V, I
D
= -5A
⎯
40 55
V
GS
= -4.5V, I
D
= -4A
Diode Forward Voltage
V
SD
⎯
-0.7 -1.0 V
V
GS
= 0V, I
S
= -1.0A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
⎯
1154
⎯
pF
V
DS
= -20V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
84
⎯
Reverse Transfer Capacitance
C
rss
⎯
66
⎯
Gate Resistance
R
G
⎯
12.6
⎯ Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= -4.5V) Q
g
⎯
10.6
⎯
nC V
DS = -20V, ID = -4.9A
Total Gate Charge (V
GS
= -10V) Q
g
⎯
21.5
⎯
Gate-Source Charge
Q
g
s
⎯
2.2
⎯
Gate-Drain Charge
Q
g
d
⎯
3.3
⎯
Turn-On Delay Time
t
D
(
on
)
⎯
8.7
⎯
nS
V
DS = -20V, ID = -3.9A
V
GS = -4.5V, RG = 1Ω
Turn-On Rise Time
t
r
⎯
19.6
⎯
Turn-Off Delay Time
t
D
(
off
)
⎯
34.9
⎯
Turn-Off Fall Time
t
f
⎯
25.5
⎯
Body Diode Reverse Recovery Time
t
r
r
⎯
9.61
⎯
nS
I
S
= -3.9A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge
Q
r
r
⎯
3.3
⎯
nC
I
S
= -3.9A, dI/dt = 100A/μs
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
N-Channel Q2
0.0
5.0
10.0
15.0
20.0
012345
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
DS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
V= 2.5V
GS
V= 3.0V
GS
V= 3.5V
GS
V= 4.5V
GS
V = 10V
GS
V= 5.0V
GS
V= 4.0V
GS
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I, D
R
AIN
C
U
R
R
ENT (A)
D
V = 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A