Instruction Manual

DMC6040SSD
Document number: DS36829 Rev. 1 - 2
7 of 9
www.diodes.com
June 2014
© Diodes Incorporated
DMC6040SSD
ADVANCE INFORMATION
NEW PRODUCT
T , AMBIENT TEMPERATURE (°C)
Figure 19 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(TH)
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-50 -25 0 25 50 75 100 125 150
-I = 1mA
D
-I = 250µA
D
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 20 Diode Forward Voltage vs. Current
SD
-I , S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
T= 150C
A
°
0
2
4
6
8
10
12
14
16
18
20
0 0.3 0.6 0.9 1.2 1.5
T= 125C
A
°
T= -55C
A
°
T= 25C
A
°
T= 85C
A
°
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
A
N
C
E (p
F
)
T
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 21 Typical Junction Capacitance
DS
10
100
1000
10000
0 5 10 15 20 25 30 35 40
f = 1MHz
C
oss
C
rss
C
iss
Q , TOTAL GATE CHARGE (nC)
Figure 22 Gate-Charge Characteristics
g
-V ,
G
A
T
E-S
O
U
R
C
E V
O
L
T
A
G
E (V)
GS
0
2
4
6
8
10
0 2 4 6 8 101214161820
V = -30V
I= -5A
DS
D
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 23 SOA, Safe Operation Area
DS
-I , D
R
AI
N
C
U
R
R
E
N
T
(A)
D
0.001
0.01
0.1
1
10
100
0.1 1 10 100
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
T = 150°C
T = 25°C
V = -10V
Single Pulse
J(max)
A
GS
DUT on 1 * MRP Board