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DMG1016UDW

Document number: DS31860 Rev. 6 - 2

1 of 9

www.diodes.com

January 2014

DMG1016UDW

NEW PRODUCT

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Product Summary

Device

(BR)DSS

DS(ON)

= +25°C

20V

0.45Ω @ V

= 4.5V

1066mA

0.75Ω @ V

= -4.5V

-845mA

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

DS(on)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Applications

• Battery Operated Systems and Solid-State Relays

• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc.

• Power Supply Converter Circuits

Features and Benefits

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Complementary Pair MOSFET

• Ultra-Small Surface Mount Package

• ESD Protected Up to 2.5kV

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

• Case: SOT363

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.006 grams (approximate)

Ordering Information (Note 4)

Part Number Compliance Case Packaging

DMG1016UDW-7 Standard SOT363 3000/Tape & Reel

DMG1016UDWQ-7 Automotive SOT363 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015 2016

Code V W X Y Z A B C D

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

ESD PROTECTED

Top View

Internal Schematic

CA1

CA1 = Product Type Marking Code

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)

YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y or Y = Year (ex: A = 2013)

M = Month (ex: 9 = September)

Summary of content (9 pages)

PAGE 1
DMG1016UDW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device RDS(ON) ID TA = +25°C • Low On-Resistance 0.45Ω @ VGS = 4.5V 1066mA • Low Gate Threshold Voltage 0.75Ω @ VGS = -4.
PAGE 2
DMG1016UDW Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value PD 330 mW RθJA 379 °C/W TJ, TSTG -55 to +150 °C Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) NEW PRODUCT Operating and Storage Temperature Range Units Maximum Ratings N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.
PAGE 3
DMG1016UDW N-CHANNEL – Q1 1.0 1.0 VGS = 8.0V VGS = 4.5V 0.8 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 3.0V 0.6 VGS = 2.5V VGS = 2.0V 0.4 VGS = 1.5V 0.2 0.6 0.4 TA = 150°C 0.2 TA = 125°C VGS = 1.2V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 5 0.8 0.7 0.6 0.5 0.4 VGS = 1.8V 0.3 VGS = 2.5V VGS = 4.5V 0.2 0.1 0 0 TA = 85°C TA = 25°C RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 0.
PAGE 4
DMG1016UDW N-CHANNEL – Q1 (cont.) IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.0 1.2 0.8 ID = 1mA ID = 250µA 0.4 0.8 TA = 25°C 0.6 0.4 0.2 0 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.
PAGE 5
DMG1016UDW Electrical Characteristics P-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage NEW PRODUCT Zero Gate Voltage Drain Current Gate-Source Leakage @Tc = +25°C Symbol Min Typ Max Unit Test Condition BVDSS -20 — — V IDSS — — -100 nA VDS = -20V, VGS = 0V IGSS — — ±2.0 μA VGS = ±4.5V, VDS = 0V VGS(th) -0.5 — -1.0 V VDS = VGS, ID = -250μA — 0.5 0.75 0.7 1.05 1.0 1.
PAGE 6
DMG1016UDW P-CHANNEL – Q2 1.0 VGS = -8.0V 1.0 VGS = -4.5V VDS = -5V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -3.0V 0.6 VGS = -2.5V VGS = -2.0V 0.4 0.2 VGS = -1.5V 0.8 0.6 0.4 T A = 150°C 0.2 TA = 125°C TA = 85°C TA = 25°C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Typical Output Characteristic 1.6 1.4 1.2 VGS = -1.8V 1.0 0.8 VGS = -2.5V 0.6 0.4 VGS = -4.5V 0.2 0 0 0.2 0.4 0.6 0.8 -ID, DRAIN-SOURCE CURRENT (A) Fig.
PAGE 7
DMG1016UDW P-CHANNEL – Q2 (cont.) 1.0 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.2 ID = -1mA 0.8 ID = -250µA 0.4 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 18 Gate Threshold Variation vs. Ambient Temperature 0.8 TA = 25°C 0.6 0.4 0.2 0 0.2 100 0.4 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 19 Diode Forward Voltage vs.
PAGE 8
DMG1016UDW Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. NEW PRODUCT A SOT363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0° 8° α All Dimensions in mm B C H K M J D F L Suggested Pad Layout Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.
PAGE 9
DMG1016UDW IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).