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DMG4413LSS

Document number: DS31754 Rev. 5 - 2

1 of 5

www.diodes.com

September 2013

DMG4413LSS

NEW PRODUCT

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(ON)

max

= +25°C

-30V

7.5mΩ @ V

= -10V

-12A

10.2mΩ @ V

= -4.5V

-10A

Description

This MOSFET has been designed to minimize the on-state

resistance (R

DS(ON)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Applications

 Backlighting

 Power Management Functions

 DC-DC Converters

Features and Benefits

 Low On-Resistance

 Low Input Capacitance

 Fast Switching Speed

 Totally Lead-Free & Fully RoHS compliant (Note 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SO-8

 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections Indicator: See diagram below

 Terminals: Finish  Matte Tin annealed over Copper lead

frame. Solderable per MIL-STD-202, Method 208

 Weight: 0.074 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMG4413LSS-13 SO-8 2500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

SO-8

Top View Top View

Pin-out

Equivalent Circuit

Chengdu A/T Site Shanghai A/T Site

= Manufacturer’s Marking

P4413LS = Product Type Marking Code

YYWW = Date Code Marking

YY or YY = Year (ex: 13 = 2013)

WW = Week (01 - 53)

YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)

YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

1 4

8 5

P4413LS

1 4

8 5

P4413LS

Summary of content (5 pages)

PAGE 1
DMG4413LSS 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) max ID max TA = +25°C  Low On-Resistance  Low Input Capacitance 7.5mΩ @ VGS = -10V -12A  Fast Switching Speed -10A  Totally Lead-Free & Fully RoHS compliant (Note 1 & 2)  Halogen and Antimony Free.
PAGE 2
DMG4413LSS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = -10V Steady State t<10s NEW PRODUCT Continuous Drain Current (Note 6) VGS = -4.
PAGE 3
DMG4413LSS 30 30 VGS = -8.0V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 20 VDS = -5V 25 VGS = -4.5V VGS = -3.5V 15 10 VGS = -3.2V 5 20 15 10 TA = 150°C TA = 125°C 5 0 1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 5 0.05 0.04 0.03 0.02 VGS = -4.5V 0.01 VGS = -8.0V 0 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 5 10 15 20 25 -ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs.
PAGE 4
20 2.7 18 2.4 ID = -1mA -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) 3.0 2.1 ID = -250µA 1.8 1.5 1.2 0.9 0.6 16 14 12 T A = 25°C 10 8 6 4 0.3 2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1.0 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.
PAGE 5
DMG4413LSS Suggested Pad Layout Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. X Dimensions X Y C1 C2 C1 NEW PRODUCT C2 Value (in mm) 0.60 1.55 5.4 1.27 Y IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).