Instruction Manual
DMG4468LK3
Document number: DS31958 Rev. 3 - 2
2 of 6
www.diodes.com
June 2013
© Diodes Incorporated
DMG4468LK3
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 5)
Steady
State
T
A
= +25°C
T
A
= +85°C
I
D
9.7
6.3
A
Pulsed Drain Current (Note 6)
I
DM
48 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
P
D
1.68 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C
R
•JA
74.3 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30 - - V
V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
- - 1.0 µA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- - ±100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.05 - 1.95 V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance
R
DS (ON)
-
11
17
16
25
mΩ
V
GS
= 10V, I
D
= 11.6A
V
GS
= 4.5V, I
D
= 10A
Forward Transfer Admittance
|Y
fs
|
- 8 - S
V
DS
= 10V, I
D
= 9A
Diode Forward Voltage
V
SD
- 0.73 1.0 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
-
867
-
pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
-
85
-
pF
Reverse Transfer Capacitance
C
rss
-
81
-
pF
Gate Resistance
R
g
-
1.39
-
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Q
g
-
18.85
-
nC
V
GS
= 10V, V
DS
= 15V,
I
D
= 11.6A
Gate-Source Charge
Q
gs
-
2.59
-
nC
Gate-Drain Charge
Q
gd
-
6.15
-
nC
Turn-On Delay Time
t
D(on)
-
5.46
-
ns
V
DD
= 15V, V
GS
= 10V,
R
L
= 1.3Ω, R
G
= 3Ω
Turn-On Rise Time
t
r
-
14.53
-
ns
Turn-Off Delay Time
t
D(off)
-
18.84
-
ns
Turn-Off Fall Time
t
f
-
6.01
-
ns
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.