Owner's manual

DMG6301UDW
Document number: DS36288 Rev. 1 - 2
4 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMG6301UDW
NEW PRODUCT
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J
°
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
0.3
0.6
0.9
1.2
1.5
-50 -25 0 25 50 75 100 125 150
V = 4.5V
I = 500mA
GS
D
V=V
I = 800mA
GS
D
8
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J
°
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(th)
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
-50 -25 0 25 50 75 100 125 150
I= 1mA
D
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I, S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
T = 150°C
A
0
0.2
0.4
0.6
0.8
1
0 0.3 0.6 0.9 1.2 1.5
T = 125°C
A
T= 85°C
A
T= 25°C
A
T = -55°C
A
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
AN
C
E (pF)
T
1
10
100
0 5 10 15 20 25
f = 1MHz
C
iss
C
oss
C
rss
Q(nC)
g
, TOTAL GATE CHARGE
Figure 11 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS
0
2
4
6
8
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
V= 5V
I= A
DS
D
200m