Owner's manual

DMHC3025LSD
Document number: DS35821 Rev. 4 - 2
3 of 9
www.diodes.com
November 2013
© Diodes Incorporated
DMHC3025LSD
NEW PRODUCT
ADVANCE INFORMATION
Electrical Characteristics N-CHANNEL (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
30
—
— V
V
GS
= 0V, I
D
= 250A
Zero Gate Voltage Drain Current
I
DSS
— —
0.5 A
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±1 A
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS
(
th
)
1 — 2 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance
R
DS (ON)
—
19 25
m
V
GS
= 10V, I
D
= 5A
—
26 40
V
GS
= 4.5V, I
D
= 4A
Forward Transfer Admittance
|Y
fs
|
—
4 — S
V
DS
= 5V, I
D
= 5A
Diode Forward Voltage
V
SD
—
0.70 1.2 V
V
GS
= 0V, I
S
= 1.7A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
—
590
—
pF
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
Output Capacitance
C
oss
—
122
—
Reverse Transfer Capacitance
C
rss
—
58
—
Gate resistance
R
g
—
1.5
—

V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
—
5.4
—
nC
V
DS
= 15V, I
D
= 7.8A
Total Gate Charge (V
GS
= 10V) Q
g
—
11.7
—
Gate-Source Charge
Q
g
s
—
1.8
—
Gate-Drain Charge
Q
g
d
—
2.1
—
Turn-On Delay Time
t
D
(
on
)
—
11.2
—
ns
V
DD
= 15V, V
GS
= 4.5V,
R
L
= 2.4, R
G
= 1,
Turn-On Rise Time
t
r
—
15
—
Turn-Off Delay Time
t
D
(
off
)
—
17.5
—
Turn-Off Fall Time
t
f
—
8.7
—
Reverse Recovery Time
t
r
r
—
18.3
—
ns
I
F
= 12A, di/dt = 500A/s
Reverse Recovery Charge
Q
r
r
—
12
—
nC
Electrical Characteristics P-CHANNEL (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-30
— —
V
V
GS
= 0V, I
D
= -250A
Zero Gate Voltage Drain Current
I
DSS
— —
-0.5 A
V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±1 A
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS
(
th
)
-1 — -2 V
V
DS
= V
GS
, I
D
= -250A
Static Drain-Source On-Resistance
R
DS (ON)
—
43 50
m
V
GS
= -10V, I
D
= -5A
—
68 80
V
GS
= -4.5V, I
D
= -4A
Forward Transfer Admittance
|Y
fs
|
—
3.5 — S
V
DS
= -5V, I
D
= -5A
Diode Forward Voltage
V
SD
—
-0.7 -1.2 V
V
GS
= 0V, I
S
= -1.7A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
—
631
—
pF
V
DS
= -15V, V
GS
= 0V,
f = 1MHz
Output Capacitance
C
oss
—
137
—
pF
Reverse Transfer Capacitance
C
rss
—
70
—
pF
Gate resistance
R
g
—
10.8
—

V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
—
5.5
—
nC
V
DS
= -15V, I
D
= -6A
Total Gate Charge (V
GS
= 10V) Q
g
—
11.4
—
nC
Gate-Source Charge
Q
g
s
—
1.8
—
nC
Gate-Drain Charge
Q
g
d
—
2.4
—
nC
Turn-On Delay Time
t
D
(
on
)
—
7.5
—
ns
V
DD
= -15V, V
GS
= -10V,
R
G
= 6, I
D
= -1A
Turn-On Rise Time
t
r
—
4.9
—
ns
Turn-Off Delay Time
t
D
(
off
)
—
28.2
—
ns
Turn-Off Fall Time
t
f
—
13.5
—
ns
Reverse Recovery Time
t
r
r
—
15.1
—
ns
I
F
= 12A, di/dt = 500A/s
Reverse Recovery Charge
Q
r
r
—
15.3
—
nC
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.