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DMHC4035LSD

Document number: DS36287 Rev. 1 - 2

1 of 9

www.diodes.com

January 2014

DMHC4035LSD

NEW PRODUCT

ADVANCE INFORMATION

NEW PRODUCT

40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE

Product Summary

Device

(BR)DSS

DS(ON)

max

= +25°C

N-Channel 40V

45m @ V

= 10V

4.5A

58m @ V

= 4.5V

P-Channel -40V

65m @ V

= -10V

-3.7A

100m @ V

= -4.5V

-2.9A

Description

This new generation complementary MOSFET H-Bridge features low

on-resistance achievable with low gate drive.

Applications

• DC Motor Control

• DC-AC Inverters

Features

• 2 x N + 2 x P channels in a SOIC package

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections Indicator: See diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.074 grams (approximate)

Ordering Information (Note 4)

Part Number Compliance Case Packaging

DMHC4035LSD-13 Standard SO-8 2500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Top View

Internal Schematic

Top View

Pin Configuration

SO-8

H-Bridge

P1G

P1S/P2S

N2D/P2D

P2G N2G

N1S/N2S

N1D/P1D

N1G

Y W

= Manufacturer’s Marking

C4035LS = Product Type Marking Code

YYWW = Date Code Marking

YY = Year (ex: 13 = 2013)

WW = Week (01 - 53)

Summary of content (9 pages)

PAGE 1
DMHC4035LSD 40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Device RDS(ON) max ID max TA = +25°C • 2 x N + 2 x P channels in a SOIC package • Low On-Resistance 45mΩ @ VGS = 10V 4.5A • Low Input Capacitance 4A • Fast Switching Speed 65mΩ @ VGS = -10V -3.7A • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 100mΩ @ VGS = -4.5V -2.9A V(BR)DSS N-Channel P-Channel 40V -40V 58mΩ @ VGS = 4.5V Description • Halogen and Antimony Free.
PAGE 2
DMHC4035LSD Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units PD 1.5 W RθJA 85 53 °C/W RθJC 15 TJ, TSTG -55 to +150 °C Value Units Total Power Dissipation (Note 5) Steady State t<10s NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case Operating and Storage Temperature Range Maximum Ratings N-CHANNEL (@TA = +25°C, unless otherwise specified.
PAGE 3
DMHC4035LSD Electrical Characteristics N-CHANNEL (@TA = +25°C, unless otherwise specified.
PAGE 4
DMHC4035LSD Typical Characteristics - N-CHANNEL 20 18 20 VGS = 3.5V VGS = 10V VGS = 5.0V 16 VGS = 4.5V 12 VGS = 4.0V 10 VGS = 3.0V 8 6 VGS = 2.3V 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.045 0.04 VGS = 4.5V 0.035 VGS = 10V 0.025 0.02 0.015 0 2 8 6 TA = 150°C TA = 125°C 4 6 8 10 12 14 16 18 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage TA = 85°C TA = 25°C TA = -55°C 0 0.5 1 1.5 2 2.5 3 3.5 4 4.
PAGE 5
VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 2.5 0.08 0.07 0.06 VGS = 5V ID = 5A 0.05 0.04 VGS = 10 V ID = 10A 0.03 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 On-Resistance Variation with Temperature 2 ID = 1mA ID = 250µA 1.5 1 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs.
PAGE 6
DMHC4035LSD Typical Characteristics - P-CHANNEL 15 12 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VDS = -5.0V VGS = -3.5V VGS = -5.0V 12 9 VGS = -3.0V 6 VGS = -2.5V 3 9 6 T A = 150°C 3 T A = 125°C VGS = -2.0V 0 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 13 Typical Output Characteristics 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.2 0.18 0.16 0.14 0.12 VGS = -4.5V 0.1 0.08 0.06 VGS = -10V 0.04 0.
PAGE 7
2 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.15 0.12 VGS = -5V ID = -5A 0.09 VGS = -10V ID = -10A 0.06 0.03 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 19 On-Resistance Variation with Temperature 1.8 1.6 -ID = 250µA 1.4 -ID = 1mA 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 20 Gate Threshold Variation vs.
PAGE 8
DMHC4035LSD r(t), TRANSIENT THERMAL RESISTANCE D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 110°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 25 Transient Thermal Resistance 10 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 0.
PAGE 9
DMHC4035LSD IMPORTANT NOTICE NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).