User guide

DMHC4035LSD
Document number: DS36287 Rev. 1 - 2
7 of 9
www.diodes.com
January 2014
© Diodes Incorporated
DMHC4035LSD
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 19 On-Resistance Variation with Temperature
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(on)
Ω
0
0.03
0.06
0.09
0.12
0.15
V= -10V
I= A
GS
D
-10
V=5V
I= A
GS
D
-
-5
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Figure 20 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(TH)
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-I = 1mA
D
-I = 250µA
D
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 21 Diode Forward Voltage vs. Current
SD
-I , S
O
U
R
C
E
C
U
R
R
E
N
T
(A)
S
0
3
6
9
12
15
0 0.3 0.6 0.9 1.2 1.5
T= 125C
A
°
T= 150C
A
°
T= 85C
A
°
T= 25C
A
°
T= -55C
A
°
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
AN
C
E (p
F
)
T
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 22 Typical Junction Capacitance
DS
10
100
1000
0 5 10 15 20 25 30 35 40
C
oss
C
rss
C
iss
Q , TOTAL GATE CHARGE (nC)
Figure 23 Gate-Charge Characteristics
g
-V ,
G
A
T
E-S
O
U
R
C
E V
O
L
T
A
G
E (V)
GS
0
2
4
6
8
10
024681012
V = -20V
I = -4.2A
DS
D
0.1 1 10 100
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 24 SOA, Safe Operation Area
DS
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
0.01
0.1
1
10
100
T = 150°C
T = 25°C
J(max)
A
V = -4.5V
Single Pulse
GS
DUT on 1 * MRP Board
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W