Instruction Manual

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DMN1033UCB4

Document number: DS36264 Rev. 2 - 2

1 of 6

www.diodes.com

September 2013

DMN1033UCB4

NEW PRODUCT

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

Product Summary

SSS

SS(ON)

= +25°C

12V 26mΩ @ V

= 4.5V 5.5 A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

SS(ON)

)

and yet maintain superior switching

performance, making it ideal for high efficiency power

management applications.

Applications

 Battery Management

 Load Switch

 Battery Protection

Features and Benefits

 Built-in G-S protection diode against ESD 2kV HBM.

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: U-WLB1818-4

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram

 Weight: 0.005 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMN1033UCB4-7 U-WLB1818-4 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2009 2010 2011 2012 2013 2014 2015

Code W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Top View

Equivalent Circuit

GW = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: Y = 2011)

M = Month (ex: 9 = September)

ESD PROTECTED TO 2kV

Summary of content (6 pages)

PAGE 1
DMN1033UCB4 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits VSSS RSS(ON) IS TA = +25°C  Built-in G-S protection diode against ESD 2kV HBM.  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12V 26mΩ @ VGS = 4.5V 5.5 A  Halogen and Antimony Free.
PAGE 2
DMN1033UCB4 Maximum Ratings Characteristic Symbol Value Drain-Source Voltage VSSS 12 V Gate-Source Voltage VGSS 6 V IS 5.5 4.5 A ISM 20 A Symbol Value Units Continuous Source Current @ VGS = 4.5V TA = +25°C (Note 5) TA = +25°C TA = +70°C Steady State NEW PRODUCT Pulsed Source Current @ TA = +25°C (Notes 5 & 6) Units Thermal Characteristics Characteristic PD 1.45 W RJA 88.
PAGE 3
DMN1033UCB4 20 12.0 VGS = 6.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 16 VGS = 4.5V VGS = 4.0V 8.0 VGS = 1.5V VGS = 2.0V 6.0 4.0 VGS = 1.0V 12 TA = 150°C 8 TA = 85°C TA = 125°C 4 2.0 TA = 25°C VGS = 0.9V 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics TA = -55°C 0.06 0.05 0.04 VGS = 1.5V VGS = 1.8V 0.03 VGS = 4.5V 0.02 VGS = 6.0V 0.01 0 0 2 4 6 8 10 12 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs.
PAGE 4
DMN1033UCB4 VGS(th), GATE THRESHOLD VOLTAGE (V) 12 0.7 10 IS, SOURCE CURRENT (A) 0.6 ID = 1mA 0.5 ID = 250µA 0.4 0.3 0.2 TA = 25°C 6 4 0 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 Gate Threshold Variation vs. Ambient Temperature IGSS, LEAKAGE CURRENT (nA) C iss 1000 C oss C rss f = 1MHz 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 10000 10000 CT, JUNCTION CAPACITANCE (pF) 8 2 0.
PAGE 5
DMN1033UCB4 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 156°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 12 Transient Thermal Resistance 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
PAGE 6
DMN1033UCB4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).