Instruction Manual
DMN1033UCB4
Document number: DS36264 Rev. 2 - 2
2 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMN1033UCB4
NEW PRODUCT
Maximum Ratings
Characteristic Symbol Value Units
Drain-Source Voltage
V
SSS
12 V
Gate-Source Voltage
V
GSS
6
V
Continuous Source Current @
V
GS
= 4.5V T
A
= +25°C (Note 5)
Steady
State
T
A
= +25°C
T
A
= +70°C
I
S
5.5
4.5
A
Pulsed Source Current @ T
A
= +25°C (Notes 5 & 6) I
SM
20 A
Thermal Characteristics
Characteristic Symbol Value Units
Power Dissipation, @T
A
= +25°C (Note 5) P
D
1.45 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5)
R
JA
88.21 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Source to Source Breakdown Voltage T
J
= +25°C V
(BR)SS
12 — — V
I
S
= 1mA, V
GS
= V
Zero Gate Voltage Source Current T
J
= +25°C I
SSS
— — 1.0 µA
V
SS
= 12V, V
GS
= 0V
Gate-Body Leakage
I
GSS
— —
10
µA
V
GS
= 6V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.35 0.5 0.7 V
V
SS
= 10V, I
S
= 1.0mA
Static Source -Source On-Resistance
R
SS(ON)
—
19.5
20
20.5
21
21.5
22
26
35
26
27
28
29
30
31
33
50
mΩ
V
GS
= 4.5V, I
S
= 3.0A
V
GS
= 4.0V, I
S
= 3.0A
V
GS
= 3.7V, I
S
= 3.0A
V
GS
= 3.5V, I
S
= 3.0A
V
GS
= 3.1V, I
S
= 3.0A
V
GS
= 2.5V, I
S
= 3.0A
V
GS
= 1.8V, I
S
= 3.0A
V
GS
= 1.5V, I
S
= 3.0A
Forward Transfer Admittance
|Y
fs
|
— 11 — S
V
SS
= 10V, I
S
= 3.0A
Body Diode Forward Voltage
V
F(S-S)
— 0.7 1.0 V
I
F
= 3.0 A, V
GS
= 0 V,
DYNAMIC CHARACTERISTICS (Note 8)
Total Gate Charge
Q
g
— 37 — nC
V
GS
= 4.5V, V
SS
= 10V, I
S
= 6A
Turn-On Delay Time
t
D(on)
— 10 — ns
V
DD
= 6V,
R
L
= 6.0Ω, I
S
= 3.0A
Turn-On Rise Time t
r
—20 — ns
Turn-Off Delay Time
t
D(off)
— 83 — ns
Turn-Off Fall Time t
f
—52 — ns
Notes: 5. Device mounted on FR4 material with 1-inch
2
(6.45-cm
2
), 2-oz. (0.071-mm thick) Cu.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.