Owner manual

DMN2013UFX
Document number: DS36657 Rev. 2 - 2
4 of 6
www.diodes.com
March 2014
© Diodes Incorporated
DMN2013UFX
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J

R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)

V = 4.5V
I = 10A
GS
D
V= V
I = 5.0A
GS
D
2.5
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J

I= 1mA
D
I = 250µA
D
V , GATE THRESHOLD VOLTAGE (V)
GS(th)
0
5
10
15
20
25
30
0 0.3 0.6 0.9 1.2 1.5
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I, S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
T= 85°C
A
T = 150°C
A
T = 125°C
A
T= 25°C
A
T = -55°C
A
10
100
1000
10000
048121620
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
AN
C
E (pF)
T
C
iss
C
oss
C
rss
f = 1MHz
0
2
4
6
8
0 5 10 15 20 25 30 35 40 45 50 55 60
Q(nC)
g
, TOTAL GATE CHARGE
Figure 11 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS
V= 10V
I= A
DS
D
8.5