Manual

DMN2300UFB
Document number: DS35235 Rev. 1 - 2
4 of 6
www.diodes.com
May 2011
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
DMN2300UFB
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.2
0.4
0.6
0.8
1.0
1.
2
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(TH)
I = 250µA
D
I = 1mA
D
0 0.2 0.4 0.6 0.8 1.0 1.2
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
0
0.4
0.8
1.2
1.6
2.0
I, S
O
U
R
C
E
C
U
R
R
E
N
T
(A)
S
T = 25°C
A
2 4 6 8 10 12 14 16 18 20
1
10
100
1,000
I , LEAKA
G
E
C
U
R
R
EN
T
(nA)
DSS
Fig. 9 Typical Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = -55°C
A
1
10
100
1,000
10,000
100,000
2 4 6 8 10 12
V , GATE-SOURCE VOLTAGE (V)
GS
Fig.10 Leakage Current vs. Gate-Source Voltage
I , LEAKA
G
E
C
U
R
R
EN
T
(nA)
GSS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
0
2
4
6
8
0 0.5 1 1.5 2 2.5 3
Fig. 11 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
V , GATE-SOURCE VOLTAGE (V)
GS
V = 15V
I = 1A
DS
D