Manual

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DMN2600UFB

Document number: DS31983 Rev. 4 - 2

1 of 6

www.diodes.com

March 2011

DMN2600UFB

NEW PRODUCT

25V N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Fast Switching Speed

• Ultra-Small Surface Mount Package

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• ESD Protected Gate 1kV

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: DFN1006-3

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Ordering Information (Note 3)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN2600UFB-7 NA 7 8 3000

DMN2600UFB-7B

7 8 10,000

Notes: 1. No purposefully added lead

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DFN1006-3

uivalent Circuit

Top View

Bottom View

Internal Schematic

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain

ESD PROTECTED TO 1kV

NA = Product Type Marking Code

DMN2600UFB-7 DMN2600UFB-7B

Top View

Bar Denotes Gate

and Source Side

Top View

Dot Denotes

Drain Side

NANA

Summary of content (6 pages)

PAGE 1
DMN2600UFB 25V N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Fast Switching Speed Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) ESD Protected Gate 1kV Qualified to AEC-Q101 Standards for High Reliability • • NEW PRODUCT • Case: DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound.
PAGE 2
DMN2600UFB Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) Steady State TA = 25°C TA = 85°C ID NEW PRODUCT Pulsed Drain Current Thermal Characteristics IDM Value 25 ±8 1.3 0.9 3.0 Unit V V Value 0.
PAGE 3
DMN2600UFB 1.5 2.0 VGS = 10V VDS = 5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 3.0V VGS = 2.5V VGS = 2.0V 1.0 VGS = 1.5V 0.5 1.0 0.5 TA = 150°C T A = 125°C TA = 85°C TA = 25°C TA = -55°C 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 0.8 0.6 VGS = 1.8V 0.4 VGS = 2.5V VGS = 4.5V 0.2 0 0 0.4 0.8 1.2 1.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 2.5V ID = 500mA 1.2 1.0 0.8 0.
PAGE 4
DMN2600UFB IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 2.0 1.0 ID = 1mA 0.8 ID = 250µA 0.6 0.4 1.6 TA = 25°C 1.2 0.8 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 100 0 1.2 10 TA = 150°C IDSS, LEAKAGE CURRENT (nA) C, CAPACITANCE (pF) 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs.
PAGE 5
DMN2600UFB r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 235°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 /t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 10 100 1,000 Package Outline Dimensions A DFN1006-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.
PAGE 6
DMN2600UFB IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).