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DMN26D0UFB4

Document number: DS31775 Rev. 7 - 2

1 of 6

www.diodes.com

March 2012

DMN26D0UFB4

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(on)

= 25°C

20V

3.0Ω @ V

= 4.5V

240mA

6.0Ω @ V

= 1.8V

170mA

Description and Applications

This new generation MOSFET has been designed to minimize the on-

state resistance (R

DS(on)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

• DC-DC Converters

• Power management functions

Features and Benefits

• N-Channel MOSFET

• Low On-Resistance:

• 3.0 Ω @ 4.5V

• 4.0 Ω @ 2.5V

• 6.0 Ω @ 1.8V

• 10 Ω @ 1.5V

• Very Low Gate Threshold Voltage, 1.05V max

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package, 0.4mm Maximum Package

Height

• ESD Protected Gate

• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X2-DFN1006-3

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Ordering Information (Note 3)

Part Number Case Packaging

DMN26D0UFB4-7 X2-DFN1006-3 3,000/Tape & Reel

DMN26D0UFB4-7B X2-DFN1006-3 10,000/Tape & Reel

Notes: 1. No purposefully added lead.

Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

X2-DFN1006-3

Bottom View

Equivalent Circuit

View

Source

Body

Diode

Gate

Protection

Diode

Gate

Drai

ESD PROTECTED

DMN26D0UFB4-7BDMN26D0UFB4-7

Top View

Dot Denotes Drain Side

Top View

Bar Denotes Gate

and Source Side

M1 = Product Type Marking Code

Summary of content (6 pages)

PAGE 1
DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits • • ID RDS(on) TA = 25°C 3.0Ω @ VGS = 4.5V 240mA 6.0Ω @ VGS = 1.8V 170mA 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
PAGE 2
DMN26D0UFB4 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) VGS = 4.5V Steady State Continuous Drain Current (Note 4) VGS = 1.
PAGE 3
DMN26D0UFB4 0.4 0.8 VGS = 8V VDS = 10V VGS = 4.5V ID, DRAIN CURRENT (A) 0.6 VGS = 3.0V 0.5 0.4 VGS = 2.5V 0.3 VGS = 2.0V 0.2 0.1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) TA = -55°C TA = 25°C TA = 85°C TA = 125°C 0.2 TA = 150°C 0.1 0 0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 5 4 3 VGS = 1.8V 2 VGS = 2.5V VGS = 4.5V 1 0.01 0 3 0.1 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1 2.0 0.
PAGE 4
1.4 0.8 1.2 0.7 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) DMN26D0UFB4 1.0 ID = 1mA 0.8 0.6 ID = 250µA 0.4 0.2 0.6 TA = 25°C 0.5 0.4 0.3 0.2 0.1 0 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs.
PAGE 5
DMN26D0UFB4 Package Outline Dimensions A A1 D b1 E e b2 L2 L3 X2-DFN1006-3 Dim Min Max Typ A 0.40 ⎯ ⎯ A1 0 0.05 0.02 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.05 1.00 E 0.55 0.65 0.60 e 0.35 ⎯ ⎯ L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 ⎯ ⎯ All Dimensions in mm L1 Suggested Pad Layout C Dimensions Z G1 G2 X X1 Y C X1 X G2 G1 Y Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Z DMN26D0UFB4 Document number: DS31775 Rev. 7 - 2 5 of 6 www.diodes.
PAGE 6
DMN26D0UFB4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).