Instruction Manual
DMN3007LSS
Document number: DS31460 Rev. 5 - 2
2 of 5
www.diodes.com
April 2010
© Diodes Incorporated
DMN3007LSS
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
30
⎯ ⎯
V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current
I
DSS
⎯ ⎯
1
μA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯ ⎯
±100
nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS
(
th
)
1.3
⎯
2.1 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
5
7.9
7
10
mΩ
V
GS
= 10V, I
D
= 15A
V
GS
= 4.5V, I
D
= 13A
Forward Transconductance
g
fs
⎯
16.4
⎯
S
V
DS
= 10V, I
D
= 15A
Diode Forward Voltage (Note 5)
V
SD
⎯
0.67 1.2 V
V
GS
= 0V, I
S
= 2.3A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯
2714
⎯
pF
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
436
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
380
⎯
pF
Gate Resistance
R
G
⎯
0.7
⎯ Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
g
⎯
31.2
64.2
⎯
nC
V
DS
= 15V, V
GS
= 4.5V, I
D
= 16A
V
DS
= 15V, V
GS
= 10V, I
D
= 16A
Gate-Source Charge
Q
g
s
⎯
7.1
⎯ V
DS
= 15V, V
GS
= 10V, I
D
= 16A
Gate-Drain Charge
Q
g
d
⎯
17.1
⎯ V
DS
= 15V, V
GS
= 10V, I
D
= 16A
Turn-On Delay Time
t
d
(
on
)
⎯
10.3
⎯
ns
V
DS
= 15V, V
GS
= 10V,
I
D
= 1A, R
G
= 6.0Ω
Rise Time
t
r
⎯
14.8
⎯
Turn-Off Delay Time
t
d
(
off
)
⎯
85.1
⎯
Fall Time
t
f
⎯
43.6
⎯
Notes: 5. Short duration pulse test used to minimize self-heating effect.
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Fig. 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
0
5
10
15
20
25
30
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V = 3.0V
GS
V = 4.0V
GS
V = 4.5V
GS
V = 10V
GS
V = 2.5V
GS
V = 2.8V
GS
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
12 34
Fig. 2 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A