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DMN3024LK3

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June 2009

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Diodes Incorporated

DMN3024LK3

30V TO252 (DPAK) N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(on)

= 25°C

30V

24mΩ @ V

= 10V

14.4A

39mΩ @ V

= 4.5V

11.6A

Description and Applications

This new generation MOSFET has been designed to minimize the on-

state resistance (R

DS(on)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

• Backlighting

• DC-DC Converters

• Power management functions

Features and Benefits

• Low on-resistance

• Fast switching speed

• Low gate drive

• “Green” component and RoHS compliant (Note 1)

Mechanical Data

• Case: TO-252 (DPAK)

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0 (Note 1)

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals Connections: See Diagram

• Terminals: Matte Tin Finish annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Below

• Ordering Information: See Below

• Weight: 0.33 grams (approximate)

Ordering Information (Note 1)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN3024LK3-13 N3024L 13 16 2,500

Note: 1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information

about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.

Marking Information

TOP VIEW PIN OUT -TOP VIEW

Equivalent Circuit

= Manufacturer’s Marking

N3024L = Product Type Marking Code

YYWW = Date Code Marking

YY = Year (ex: 09 = 2009)

WW = Week (01-52)

YYWW

N3024L

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Summary of content (8 pages)

PAGE 1
A Product Line of Diodes Incorporated DMN3024LK3 30V TO252 (DPAK) N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V(BR)DSS Features and Benefits ID RDS(on) TA = 25°C 24mΩ @ VGS= 10V 14.4A 39mΩ @ VGS= 4.5V 11.
PAGE 2
A Product Line of Diodes Incorporated DMN3024LK3 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGS Drain-Source voltage Gate-Source voltage Continuous Drain current VGS = 10V Pulsed Drain current VGS= 10V Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 3) TA=70°C (Note 3) (Note 2) (Note 4) (Note 3) (Note 4) ID IDM IS ISM Value 30 ±20 14.4 12.0 9.78 46.5 12 46.5 Unit V V Value 4.1 32.5 8.9 71.4 2.17 17.4 30.8 14.0 57.6 2.
PAGE 3
A Product Line of Diodes Incorporated DMN3024LK3 Thermal Characteristics RDS(on) 10 Limit ID Drain Current (A) ID Drain Current (A) RDS(on) DC 1 1s 100ms 100m 1ms 25mm x 25mm 1oz FR4 10m 100m DC 1 1s 100ms 100m 10ms T amb=25°C Limit 10 100µs 1 10 10ms T amb=25°C 1ms 50mm x 50mm 2oz FR4 10m 0.1 100µs 1 VDS Drain-Source Voltage (V) 10 VDS Drain-Source Voltage (V) Safe Operating Area Safe Operating Area T amb=25°C 50 25mm x 25mm 1oz FR4 40 D=0.5 30 20 D=0.1 D=0.
PAGE 4
A Product Line of Diodes Incorporated DMN3024LK3 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 30 ⎯ ⎯ V ID = 250μA, VGS= 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 0.5 μA VDS= 30V, VGS= 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS= ±20V, VDS= 0V VGS(th) 1.0 ⎯ 3.0 V ID= 250μA, VDS= VGS ON CHARACTERISTICS Gate Threshold Voltage 0.
PAGE 5
A Product Line of Diodes Incorporated DMN3024LK3 Typical Characteristics 5V ID Drain Current (A) T = 150°C 4V 3.5V 3V 1 0.1 2.5V VGS T = 25°C 10V VGS 4V 3.5V 10 ID Drain Current (A) 10V 10 3V 2.5V 1 2V 0.1 1.5V 0.01 0.01 0.1 1 10 0.1 VDS Drain-Source Voltage (V) 1 10 VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics ID Drain Current (A) VDS = 10V T = 150°C 1 T = 25°C 0.
PAGE 6
A Product Line of Diodes Incorporated DMN3024LK3 Typical Characteristics - continued VGS = 0V C Capacitance (pF) 800 f = 1MHz 700 600 CISS 500 COSS 400 CRSS 300 200 100 0 1 10 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage VGS Gate-Source Voltage (V) 900 10 9 8 7 6 5 4 3 2 1 0 ID = 7A VDS = 15V 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Q - Charge (nC) Gate-Source Voltage v Gate Charge Test Circuits Current regulator QG 50k 12V VG Q GS Same as D.U.
PAGE 7
A Product Line of Diodes Incorporated DMN3024LK3 Package Outline Dimensions DIM Inches Millimeters DIM Inches Min Max Min Max A 0.086 0.094 2.18 2.39 e A1 - 0.005 - 0.127 H 0.370 0.410 9.40 10.41 b 0.020 0.035 0.508 0.89 L 0.055 0.070 1.40 1.78 b2 0.030 0.045 0.762 1.14 L1 0.108 REF 2.74 REF b3 0.205 0.215 5.21 5.46 L2 0.020 BSC 0.508 BSC c 0.018 0.024 0.457 0.61 L3 0.035 0.065 0.89 1.65 c2 0.018 0.023 0.457 0.584 L4 0.025 0.040 0.
PAGE 8
A Product Line of Diodes Incorporated DMN3024LK3 Suggested Pad Layout 6.2 0.244 3.0 0.118 5.8 0.228 1.6 0.063 2.58 0.101 6.17 0.243 mm inches IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).