Manual

DMN3024LK3
Document Revision: 1
4 of 8
www.diodes.com
June 2009
© Diodes Incorporated
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Product Line o
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Diodes Incorporated
DMN3024LK3
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
30
⎯ ⎯
V
I
D
= 250μA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
⎯ ⎯
0.5
μA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯ ⎯
±100
nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
1.0
⎯
3.0 V
I
D
= 250μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 7)
R
DS (ON)
⎯ ⎯
0.024
Ω
V
GS
= 10V, I
D
= 7.0A
0.039
V
GS
= 4.5V, I
D
= 6.0A
Forward Transconductance (Notes 7 & 8)
g
fs
⎯
16.5
⎯
S
V
DS
= 15V, I
D
= 7.0A
Diode Forward Voltage (Note 7)
V
SD
⎯
0.82 1.2 V
I
S
= 1.7A, V
GS
= 0V
Reverse recovery time (Note 8)
t
rr
12
⎯
ns
I
S
= 2.2A, di/dt= 100A/μs
Reverse recovery charge (Note 8)
Q
rr
⎯
4.8
⎯
nC
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
⎯
608
⎯
pF
V
DS
= 15V, V
GS
= 0V
f= 1MHz
Output Capacitance
C
oss
⎯
132
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
71
⎯
pF
Total Gate Charge
Q
g
⎯
12.9
⎯
nC
V
DS
= 15V, V
GS
= 10V
I
D
= 7A
Gate-Source Charge
Q
gs
⎯
2.5
⎯
nC
Gate-Drain Charge
Q
gd
⎯
2.5
⎯
nC
Turn-On Delay Time (Note 9)
t
D(on)
⎯
2.9
⎯
ns
V
DD
= 15V, V
GS
= 10V
I
D
= 1A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 9)
t
r
⎯
3.3
⎯
ns
Turn-Off Delay Time (Note 9)
t
D(off)
⎯
16
⎯
ns
Turn-Off Fall Time (Note 9)
t
f
⎯
8
⎯
ns
Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
9. Switching characteristics are independent of operating junction temperatures.