User guide

DMN3033LSN
Document number: DS31116 Rev. 6 - 2
2 of 5
www.diodes.com
August 2011
© Diodes Incorporated
DMN3033LSN
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BV
DSS
30
⎯ ⎯
V
I
D
= 250μA, V
GS
= 0V
Zero Gate Voltage Drain Current T
J
= 25°C
T
J
= 55°C
I
DSS
⎯ ⎯
1
5
μA
V
DS
= 30V, V
GS
= 0V
Gate-Body Leakage Current
I
GSS
⎯ ⎯
±100
nA
V
DS
= 0V, V
GS
= ±20V
Gate Threshold Voltage
V
GS
(
th
)
1.0
⎯
2.1 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance (Note 5)
R
DS (ON)
⎯
25
36
30
40
mΩ
V
GS
= 10V, I
D
= 6A
V
GS
= 4.5V, I
D
= 5A
Forward Transconductance (Note 5)
g
FS
⎯
5
⎯
S
V
DS
= 10V, I
D
= 8A
Diode Forward Voltage (Note 5)
V
SD
⎯
0.7 1.1 V
I
S
= 2.25A, V
GS
= 0V
DYNAMIC PARAMETERS (Note 6)
Total Gate Charge
Q
g
⎯
10.5
⎯
nC
V
GS
= 5V, V
DS
= 15V, I
D
= 6A
Gate-Source Charge
Q
g
s
⎯
3.8
⎯
nC
V
GS
= 10V, V
DS
= 15V, I
D
= 6A
Gate-Drain Charge
Q
g
d
⎯
2.9
⎯
nC
V
GS
= 10V, V
DS
= 15V, I
D
= 6A
Turn-On Delay Time
t
D
(
on
)
⎯
11
⎯
ns
V
DD
= 15V, V
GS
= 10V,
R
D
= 1.8Ω, R
G
= 6Ω
Turn-On Rise Time
t
r
⎯
7
⎯
ns
Turn-Off Delay Time
t
D
(
off
)
⎯
63
⎯
ns
Turn-Off Fall Time
t
f
⎯
30
⎯
ns
Input Capacitance
C
iss
⎯
755
⎯
pF
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
136
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
108
⎯
pF
Notes: 5. Test pulse width t = 300ms.
6. Guaranteed by design. Not subject to production testing.
0
2
4
6
8
10
12
14
16
18
20
01 234
V = 5V
Pulsed
DS