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DMN3065LW

Document number: DS36078 Rev. 5 - 2

1 of 5

www.diodes.com

April 2014

DMN3065LW

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Product Summary

(BR)DSS

DS(ON)

Package

D max

= +25°C

30V

52m @ V

= 10V

SOT323 4A

65m @ V

= 4.5V

85m @ V

= 2.5V

Applications

• DC-DC Converters

• Power Management Functions

• Battery Operated Systems and Solid-State Relays

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT323

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.

Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.006 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMN3065LW-7 SOT323 3000/Tape & Reel

DMN3065LW-13 SOT323 10000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2012 2013 2014 2015 2016 2017 2018

Code Z A B C D E F

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Top View

Pin Configuration

Top View

SOT323

Equivalent CircuitI

N35 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: A = 2013)

M = Month (ex: 9 = September)

N35

Summary of content (5 pages)

PAGE 1
DMN3065LW N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features Package V(BR)DSS RDS(ON) 30V 52mΩ @ VGS = 10V 65mΩ @ VGS = 4.5V 85mΩ @ VGS = 2.5V ID max TA = +25°C SOT323 4A • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free.
PAGE 2
DMN3065LW Maximum Ratings (@TA = +25°C, unless otherwise specified.
PAGE 3
DMN3065LW 10.0 20 VGS = 10V VDS = 5.0V 18 VGS = 4.5V 16 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 8.0 VGS = 3.5V 6.0 VGS = 3.0V VGS = 2.0V 4.0 VGS = 2.5V 14 12 10 8 TA = 150°C 6 TA = 125°C 4 2.0 TA = 25°C T A = 85°C 2 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1 0.1 VGS = 2.5V VGS = 4.5V VGS = 10V 0.01 1 VGS = 10V ID = 6A RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.8 1.6 VGS = 4.
PAGE 4
DMN3065LW 20 18 16 1.6 1.2 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) 2 ID = 1mA 0.8 ID = 250µA 0.4 14 12 10 TA = 25°C 8 6 4 2 0 -50 0 1,000 10 Ciss VGS GATE THRESHOLD VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) 75 100 125 150 -25 0 25 50 TJ, JUNCTION TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 100 Coss Crss 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs.
PAGE 5
DMN3065LW Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C Dimensions Value (in mm) Z 2.8 X 0.7 Y 0.9 C E X 1.9 1.0 E IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).