Instruction Manual

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DMN313DLT

Document number: DS35078 Rev. 2 - 2

1 of 5

www.diodes.com

August 2011

DMN313DLT

NEW PRODUCT

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(ON)

= 25°C

30V

2 @ V

= 4V 270mA

3.2 @ V

= 2.5V 210mA

Description and Applications

This new generation MOSFET has been designed to minimize the on-

state resistance (R

DS(on)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

• Backlighting

• DC-DC Converters

• Power management functions

Features and Benefits

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 1)

• ESD Protected up to 2kV

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT-523

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe.

Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.002 grams (approximate)

Ordering Information (Note 3)

Part Number Case Packaging

DMN313DLT-7 SOT-523 3000 / Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2010 2011 2012 2013 2014 2015 2016

Code X Y Z A B C D

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

SOT-523

Top View

Pin-Out

ESD PROTECTED TO 2kV

Source

Gate

Protection

Diode

Gate

Drai

Equivalent Circuit

NA2

NA2 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: X = 2010)

M = Month (ex: 9 = September)

Summary of content (5 pages)

PAGE 1
DMN313DLT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS(ON) ID TA = 25°C 2Ω @ VGS = 4V 270mA 3.2Ω @ VGS = 2.
PAGE 2
DMN313DLT Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) VGS = 4.0V Steady State Continuous Drain Current (Note 5) VGS = 4.0V Steady State Continuous Drain Current (Note 5) VGS = 4.0V t ≤ 10s Continuous Drain Current (Note 4) VGS = 2.5V Steady State Continuous Drain Current (Note 5) VGS = 2.
PAGE 3
DMN313DLT 1 1.0 VGS = 10V TA = 85°C VGS = 4.0V ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = 5.0V VGS = 3.0V 0.6 VGS = 2.0V 0.4 TA = 125°C 0.1 TA = 25°C TA = 150°C TA = -55°C 0.01 0.2 VGS = 1.5V 0.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 2 VGS = 2.5V VGS = 4.5V 1.5 VGS = 10V 1 0.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 ID, DRAIN-SOURCE CURRENT (A) Fig.
PAGE 4
DMN313DLT 10 60 f=1MHz 50 8 45 40 CISS 35 VGS (V) CT, JUNCTION CAPACITANCE (pF) 30 25 VDS = 15V 6 ID = 800mA 4 20 15 2 10 COSS 5 CRSS 0 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 7 Typical Junction Capacitance 0 0 20 0.2 0.4 0.6 0.8 1 QG - (nC) Fig. 08 Gate Charge Characteristics 1.2 1 r(t) @ D=0.5 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 55 r(t) @ D=0.7 r(t) @ D=0.3 r(t) @ D=0.9 0.1 r(t) @ D=0.1 r(t) @ D=0.05 r(t) @ D=0.02 0.01 r(t) @ D=0.01 r(t) @ D=0.
PAGE 5
DMN313DLT Suggested Pad Layout Y NEW PRODUCT Z C X Dimensions Value (in mm) Z 1.8 X 0.4 Y 0.51 C 1.3 E 0.7 E IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).