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DMN4800LSSL

Document number: DS35016 Rev. 4 - 2

1 of 6

www.diodes.com

November 2013

DMN4800LSSL

NEW PRODUCT

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(on)

max

= +25°C

30V

14mΩ @ V

GS = 10V 8.0A

20mΩ @ VGS = 4.5V 6.7A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

DS(on)) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Applications

• DC-DC Converters

• Power management functions

Features and Benefitss

• 14mΩ @ V

= 10V

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Weight: 0.072 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMN4800LSSL-13 SO-8 2500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Top View

SO-8

Top View

Internal Schematic

Equivalent circuit

Chengdu A/T Site Shanghai A/T Site

= Manufacturer’s Marking

N4800LS = Product Type Marking Code

YYWW = Date Code Marking

YY or YY = Year (ex: 13 = 2013)

WW = Week (01 - 53)

YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)

YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

1 4

8 5

N4800LS

1 4

8 5

N4800LS

Summary of content (6 pages)

PAGE 1
DMN4800LSSL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefitss ID max RDS(on) 30V TA = +25°C 14mΩ @ VGS = 10V 8.0A 20mΩ @ VGS = 4.5V 6.7A NEW PRODUCT Description 14mΩ @ VGS = 10V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free.
PAGE 2
DMN4800LSSL Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 5) VGS = 10V Drain Current (Note 5) VGS = 10V Symbol VDSS VGSS Steady State Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C ID IDM 6.7 5.3 50 Symbol PD RθJA TJ, TSTG Value 1.46 86 -55 to +150 ID Pulsed Drain Current (Note 6) NEW PRODUCT Value 30 ±20 8.0 6.
PAGE 3
DMN4800LSSL 30 30 VGS = 10V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 20 VGS = 3.0V 15 10 VGS = 2.5V VGS = 2.0V 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 15 10 TA = 150°C TA = 125°C 0.07 0.06 0.05 0.04 0.03 0.02 V GS = 4.5V 0.01 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1 1.2 VGS = 4.5V ID = 10A 0.8 VGS = 10V ID = 11.6A VGS = 4.5V TA = 150°C TA = 125°C 0.02 TA = 85°C TA = 25°C 0.
PAGE 4
DMN4800LSSL TA = 25°C 1.2 ID = 1mA IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 20 ID = 250µA 0.8 0.4 12 8 4 0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 10 VGS, GATE-SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 10,000 1,000 Ciss Coss 100 10 16 0 0.4 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature Crss 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig.
PAGE 5
DMN4800LSSL r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 85°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 D = Single Pulse 0.001 0.0001 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 0.
PAGE 6
DMN4800LSSL IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).