User Manual

DMN53D0LW
Document number: DS36579 Rev. 2 - 2
4 of 5
www.diodes.com
November 2013
© Diodes Incorporated
DMN53D0LW
NEW PRODUCT
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
J

V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(th)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I= 1mA
D
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 8 Diode Forward Voltage vs. Current
I, S
O
U
R
C
E
C
U
R
R
ENT (A)
S
T = 150°C
A
0
0.2
0.4
0.6
0.8
1.0
0 0.3 0.6 0.9 1.2 1.5
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9 Typical Junction Capacitance
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
AN
C
E (pF)
T
1
10
100
0 5 10 15 20 25 30 35 40
C
iss
C
oss
C
rss
f = 1MHz
Q(nC)
g
, TOTAL GATE CHARGE
Figure 10 Gate Charge
0
2
4
6
8
10
V
G
A
T
E
T
H
R
ES
H
O
L
D
V
O
L
T
A
G
E (V)
GS
0 0.3 0.6 0.9 1.2 1.5
V = 10V
I= A
DS
D
250m
SOT323
Dim Min Max Typ
A 0.25 0.40 0.30
B 1.15 1.35 1.30
C 2.00 2.20 2.10
D - - 0.65
G 1.20 1.40 1.30
H 1.80 2.20 2.15
J 0.0 0.10 0.05
K 0.90 1.00 1.00
L 0.25 0.40 0.30
M 0.10 0.18 0.11

0° 8° -
All Dimensions in mm
A
M
J
L
D
B
C
H
K
G