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DMN601DWK

Document number: DS30656 Rev. 7 - 2

1 of 5

www.diodes.com

January 2014

DMN601DW

NEW PRODUCT

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Product Summary

(BR)DSS

DS(ON)

max

= +25°C

60V

3 @ V

= 5V

0.3A

Description

This MOSFET has been designed to minimize the on-state resistance

DS(ON)

) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Applications

 Motor Control

 Power Management Functions

Features

 Dual N-Channel MOSFET

 Low On-Resistance

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 Ultra-Small Surface Mount Package

 ESD Protected Up To 2kV

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT363

 Case Material: Molded Plastic. “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram

 Weight: 0.006 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMN601DWK-7 SOT-363 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code S T U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

SOT363

Top View

ESD Protected up to 2kV

Source

Body

Diode

EQUIVALENT CIRCUIT PER ELEMENT

Gate

Protection

Diode

Gate

Drai

K7K YM

Top View

Internal Schematic

K7K YM

K7K = Product Type Marking Code

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)

YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y or Y = Year (ex: A = 2013)

M = Month (ex: 9 = September)

Summary of content (5 pages)

PAGE 1
DMN601DWK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features V(BR)DSS RDS(ON) max ID max TA = +25°C  Dual N-Channel MOSFET  Low On-Resistance 60V 3Ω @ VGS = 5V 0.
PAGE 2
DMN601DWK Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Value Unit Drain Source Voltage VDSS 60 V Gate-Source Voltage VGSS 20 V ID 305 800 mA Symbol Value Unit PD 200 mW RθJA 625 °C/W TJ, TSTG -65 to +150 °C Continuous Drain Current (Note 5) NEW PRODUCT Symbol Pulsed (Note 6) Thermal Characteristics (@TA = +25°C, unless otherwise specified.
PAGE 3
DMN601DWK ID, DRAIN CURRENT (A) 1.0 10V VDS = 10V Pulsed 8V 6V 5V 0.8 0.4 TA = 75° C TA = 25° C 3V 0 0 TA = -25° C 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0.01 5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 10 2 VDS = 10V VGS = 10V Pulsed ID = 1mA Pulsed RDS(ON), STATIC DRAIN SOURCE ON-RESISTANCE () VGS(th), GATE THRESHOLD VOLTAGE (V) T A = 125° C 0.10 4V 0.6 0.2 1.5 1 0.
PAGE 4
DMN601DWK 2.5 RDS(ON), STATIC DRAIN SOURCE ON-RESISTANCE () 2 ID = 150mA 1.5 1 0.5 VGS = 0V Pulsed TA = 125°C TA = 150°C 0.1 TA = 85°C TA = 25°C TA = 0°C 0.01 TA = -25°C T A = -55 ° C 0 -75 -50 -25 0 25 50 75 100 125 150 TCH , CHANNEL TEMPERATURE (° C) Figure 7 Static Drain-Source On-State Resistance vs. Channel Temperature 0.001 0.5 1 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Reverse Drain Current vs.
PAGE 5
DMN601DWK Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. NEW PRODUCT E Z E Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C 1.9 E 0.65 C G Y X IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).