Owner's manual

DMN601DWK
Document number: DS30656 Rev. 7 - 2
2 of 5
www.diodes.com
January 2014
© Diodes Incorporated
DMN601DW
K
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain Source Voltage
V
DSS
60 V
Gate-Source Voltage
V
GSS
20
V
Drain Current (Note 5)
Continuous
I
D
305
800
mA
Pulsed (Note 6)
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5)
P
D
200 mW
Thermal Resistance, Junction to Ambient
R
JA
625 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60
 
V
V
GS
= 0V, I
D
= 10µA
Zero Gate Voltage Drain Current
I
DSS
 
1 µA
V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
 
10
µA
V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.0 1.6 2.5 V
V
DS
= 10V, I
D
= 1mA
Static Drain-Source On-Resistance
R
DS(ON)



2.0
3.0

V
GS
= 10V, I
D
= 0.5A
V
GS
= 5V, I
D
= 0.05A
Forward Transfer Admittance
|Y
fs
|
80
 
ms
V
DS
=10V, I
D
= 0.2A
Diode Forward Voltage
(Note 8)
V
SD
0.5

1.4 V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
 
50 pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
 
25 pF
Reverse Transfer Capacitance
C
rss
 
5.0 pF
Notes: 5. Device mounted on FR-4 PCB.
6. Pulse width 10µS, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.