Owner manual
DMN63D8LDW
Document number: DS36021 Rev. 3 - 2
2 of 6
www.diodes.com
November 2012
© Diodes Incorporated
DMN63D8LDW
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
220
170
mA
Continuous Drain Current (Note 6) V
GS
=
10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
260
210
mA
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
I
DM
800 mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation
(Note 5)
P
D
300
mW
(Note 6) 400
Thermal Resistance, Junction to Ambient
(Note 5)
R
θ
JA
435
°C/W
(Note 6) 330
Thermal Resistance, Junction to Case
(Note 6)
R
θ
JC
139
Operating and Storage Temperature Range
T
J,
T
STG
-55 to 150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30
⎯ ⎯
V
V
GS
= 0V,
I
D
= 250μA
Zero Gate Voltage Drain Current
I
DSS
⎯ ⎯
1.0 µA
V
DS
= 30V,
V
GS
= 0V
Gate-Body Leakage
I
GSS
⎯ ⎯
±10.0
μA
V
GS
=
±20V,
V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
(
th
)
0.8
⎯
1.5 V
V
DS
= V
GS
,
I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
⎯
2.8
Ω
V
GS
= 10.0V,
I
D
= 250mA
⎯
⎯
3.8
V
GS
= 5V,
I
D
=
250mA
⎯
⎯
4.2
V
GS
= 4.5V,
I
D
= 250mA
⎯
⎯
4.5
V
GS
= 4.0V,
I
D
= 250mA
⎯
⎯
13
V
GS
= 2.5V,
I
D
= 10mA
Forward Transconductance
g
FS
80
⎯ ⎯
mS
V
DS
= 10V,
I
D
= 0.115A
Diode Forward Voltage
V
SD
- 0.8
1.2
V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
⎯
22.0
⎯
pF
V
DS
= 25V,
V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
⎯
3.2
⎯
Reverse Transfer Capacitance
C
rss
⎯
2.0
⎯
Gate Resistance
R
G
⎯
79.9
⎯ Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge V
GS
= 10V Q
g
⎯
0.87
⎯
nC
V
GS
= 10V, V
DS
= 30V,
I
D
= 150mA
Total Gate Charge V
GS
= 4.5V Q
g
⎯
0.43
⎯
Gate-Source Charge
Q
g
s
⎯
0.11
⎯
Gate-Drain Charge
Q
g
d
⎯
0.11
⎯
Turn-On Delay Time
t
D
(
on
)
⎯
3.3
⎯
nS
V
DD
= 30V, I
D
= 0.115A,
V
GEN
= 10V
,
R
GEN
= 25Ω
Turn-On Rise Time
t
r
⎯
3.2
⎯
Turn-Off Delay Time
t
D
(
off
)
⎯
12.0
⎯
Turn-Off Fall Time
t
f
⎯
6.3
⎯
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.