Owner manual

DMN65D8LFB
Document number: DS35449 Rev. 2 - 2
3 of 5
www.diodes.com
November 2011
© Diodes Incorporated
DMN65D8LFB
NEW PRODUCT
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig.1 Typical Output Characteristics
V =2.5V
GS
V =3.0V
GS
V =3.5V
GS
V =4.0V
GS
V =4.5V
GS
V =5.0V
GS
V =10V
GS
0.01
0.1
1
0 0.5 1 1.5 2 2.5 3 3.5 4
V , GATE-SOURCE VOLTAGE
GS
Fig. 2 Typical Transfer Characteristics
V= 5.0V
DS
T=-55C
A
°
T=25C
A
°
T=85C
A
°
T =125 C
A
°
T =150 C
A
°
I , DRAIN CURRENT (A)
D
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0 0.1 0.2 0.3 0.4 0.5 0.6
I , DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Charge
D
V=5V
GS
V =10V
GS
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ( C)
Fig. 4 On-Resistance Variation with Temperature
°
V =10V,
I =115mA
GS
D
V=5V,
I =115mA
GS
D
R , DRAIN-SOURCE ON-RESISTANCE
(Normalized)
DS(ON)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 Gate Threshold Variation vs. Ambient Temperature
I =250µA
D
I=1mA
D
V,
G
ATE TH
R
ESH
O
LD V
O
LTA
G
E (V)
GS(TH)
0
5
10
15
20
25
30
35
40
45
50
0 5 10 15 20 25
V , DRAIN-SOURCE VOLTAGE
Fig. 6 Typical Junction Capacitance
DS
f=1MHz
C
ISS
C
OSS
C
RSS
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
AN
C
E (
p
F
)
T