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DMP1022UFDF

Datasheet number: DS36624 Rev. 3 - 2

1 of 6

www.diodes.com

March 2014

DMP1022UFDF

NEW PRODUC T

12V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(ON)

max

= +25°C

-12V

15.3mΩ @ V

= -4.5V

-9.5A

19mΩ @ V

= -2.5V

-8.5A

26.5mΩ @ V

= -1.8V

-7.2A

32mΩ @ V

= -1.5V

-6.6A

Description

This MOSFET has been designed specifically for use in battery

management applications.

Features

 0.6mm profile – ideal for low profile applications

 PCB footprint of 4mm

 Low Gate Threshold Voltage

 Fast Switching Speed

 ESD Protected Gate

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: U-DFN2020-6

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

 Weight: 0.0065 grams (approximate)

Ordering Information (Note 4)

Part Number

Marking

Reel Size (inches)

Quantity per Reel

DMP1022UFDF-7

3,000

DMP1022UFDF-13

10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year

2011

2012

2013

2014

2015

2016

2017

Code

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

Pin Out

ESD PROTECTED

Internal Schematic

PU = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: A = 2013)

M = Month (ex: 9 = September)

U-DFN2020-6

Bottom View

Top View

Gate Protection

Diode

Summary of content (6 pages)

PAGE 1
DMP1022UFDF 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) max ID max TA = +25°C  0.6mm profile – ideal for low profile applications  PCB footprint of 4mm 15.3mΩ @ VGS = -4.5V -9.5A  Low Gate Threshold Voltage 19mΩ @ VGS = -2.5V -8.5A  Fast Switching Speed 26.5mΩ @ VGS = -1.8V -7.2A  ESD Protected Gate 32mΩ @ VGS = -1.5V -6.6A  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
PAGE 2
DMP1022UFDF Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = -4.5V TA = +25°C TA = +70°C TA = +25°C TA = +70°C Steady State t<5s ID IDM TA = +25°C TC = +25°C Continuous Source-Drain Diode Current IS Pulsed Source-Drain Diode Current (10μs pulse, duty cycle = 1%) Units V V A -11.0 -8.8 -90 -2.5 -7.
PAGE 3
DMP1022UFDF 20 30 VDS = -5.0V 25 16 VGS = -2.5V 20 VGS = -2.0V 12 VGS = -1.8V VGS = -1.5V 15 10 TA = 125C TA = 85C TA = 25C TA = -55C VGS = -1.2V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 5 0.06 0.05 VGS = -1.5V 0.04 0.03 VGS = -1.8V 0.02 VGS = -2.5V VGS = -4.5V 0.01 0 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = -2.5V ID = -5A 1.1 VGS = -4.
PAGE 4
DMP1022UFDF VGS(TH), GATE THRESHOLD VOLTAGE (V) 20 1.2 -IS, SOURCE CURRENT (A) 16 1 12 0.8 -I D = 1mA 0.6 -ID = 250µA 0.4 TA= 25C 8 4 0.2 0 0.4 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 0.6 0.8 1 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs.
PAGE 5
DMP1022UFDF Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A A1 A3 Seating Plane NEW PRODUCT D E3 D3 D2 E E2 L e2 Z1 e U-DFN2020-6 Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.03 A3 0.15 b 0.25 0.35 0.30 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 D3 0.33 0.43 0.38 e 0.65 BSC e2 0.863 BSC E 1.95 2.05 2.00 E2 1.05 1.25 1.15 E3 0.65 0.75 0.70 L 0.225 0.325 0.275 Z 0.20 BSC Z1 0.
PAGE 6
DMP1022UFDF IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).