Instruction Manual
DMP1080UCB4
Document number: DS35827 Rev. 4 - 2
2 of 6
www.diodes.com
December 2012
© Diodes Incorporated
DMP1080UCB4
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage
V
DSS
-12 V
Gate-Source Voltage
V
GSS
-6 V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-3.3
-2.7
A
Continuous Drain Current (Note 5) V
GS
= -2.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-3.0
-2.4
A
Pulsed Drain Current (Note 6)
I
DM
20 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 7)
P
D
0.82 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 7) R
JA
150 °C/W
Thermal Resistance, Junction to Case @T
C
= +25°C (Note 7) R
JC
42.66 °C/W
Power Dissipation (Note 5)
P
D
1.59 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5) R
JA
80.29 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
-12 - - V
V
GS
= 0V, I
D
= -250A
Gate-Source Breakdown Voltage
BV
GSS
-6.0 - - V
V
DS
= 0V, I
G
= -250A
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
- - -1
μA
V
DS
= -9.6V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- - -100 nA
V
GS
= -6V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS
(
th
)
-0.4 -0.6 -1.0 V
V
DS
= V
GS
, I
D
= -250A
Static Drain-Source On-Resistance
R
DS (ON)
- 65 80
mΩ
V
GS
= -4.5V, I
D
= -500mA
- 77 93
V
GS
= -2.5V, I
D
= -500mA
- 108 130
V
GS
= -1.5V, I
D
= -500mA
Forward Transfer Admittance
|Y
fs
|
- 4 - S
V
DS
= -6V, I
D
= -500mA
Diode Forward Voltage
V
SD
-0.6 -1.0 V
V
GS
= 0V, I
S
= -500mA
Reverse Recovery Charge
Q
r
r
- 2.0 - nC
V
dd
= –4.0V, I
F
= –0.5A,
di/dt =100A/s
Reverse Recovery Time
t
r
r
- 9.5 - ns
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
- 213 350
pF
V
DS
= -6V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 119 250
Reverse Transfer Capacitance
C
rss
- 54.4 90
Total Gate Charge
Q
g
- 2.5 5
nC
V
GS
= -4.5V, V
DS
= -6V,
I
D
= -500mA
Gate-Source Charge
Q
g
s
- 0.3 -
Gate-Drain Charge
Q
g
d
- 0.6 -
Gate Charge at Vth
Q
g
(
th
)
- 0.15 -
Turn-On Delay Time
t
D
(
on
)
- 16.7 -
ns
V
DS
= -6V, V
GS
= -2.5V,
R
G
= 20, I
D
= -500mA
Turn-On Rise Time
t
r
- 20.6 -
Turn-Off Delay Time
t
D
(
off
)
- 38.4 -
Turn-Off Fall Time
t
f
- 28.4 -
Notes: 5. Device mounted on FR4 material with 1-inch
2
(6.45-cm
2
), 2-oz. (0.071-mm thick) Cu.
6. Repetitive rating, pulse width limited by junction temperature.
7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.