Instruction Manual

DMP1080UCB4
Document number: DS35827 Rev. 4 - 2
4 of 6
www.diodes.com
December 2012
© Diodes Incorporated
DMP1080UCB4
0.2
0.4
0.6
0.8
1.2
1.0
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(TH)
-I = 1mA
D
-I = 250µA
D
0
1
2
3
4
5
0 0.3 0.6 0.9 1.2 1.5
-V , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
SD
-I , S
O
U
R
C
E
C
U
R
R
E
N
T
(A)
S
T= 25C
A
°
T= -55C
A
°
T= 85C
A
°
T= 125C
A
°
T= 150C
A
°
0 1 2 3 4 5 6 7 8 9 10 11 12
0.1
10
100
1,000
100,000
-I , LEAKA
G
E
C
U
R
R
EN
T
(nA)
DSS
10,000
1
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Drain-Source Leakage Current vs. Voltage
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
0.1 1 10 100
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 10 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
T = 150°C
T = 25°C
J(max)
A
V = -6V
Single Pulse
GS
DUT on 1 * MRP Board
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10s
W
µ
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIMES (sec)
Fig. 11 Transient Thermal Resistance
R (t) = r(t) * R
R = 153°C/W
Duty Cycle, D = t1/ t2
θθ
θ
JA JA
JA
0.001
0.01
0.1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
1
D = 0.7
D = 0.9
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse