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DMP1245UFCL

Document number: DS35505 Rev. 1 - 2

1 of 7

www.diodes.com

November 2011

DMP1245UFCL

ADVANCE INFORMATION

A Product Line o

Diodes Incorporated

12V P-CHANNEL ENHANCEMENT MODE MOSFET

Summary

(BR)DSS

DS(on)

max I

max

-12V

29mΩ @V

= -4.5V

-6.6 A

45mΩ @V

= -2.5V

-5.3 A

60mΩ @V

= -1.8V

-4.6 A

100mΩ @V

= -1.5V

-3.5 A

Application

This device provides a high performance, low R

DS(ON)

P channel

MOSFETs in the thermally and space efficient X1-DFN1616-6

package. The low R

DS(ON)

of this MOSFET ensures conduction

losses are kept making it ideal for use as a:

• Battery disconnect switch

• Load switch for power management functions

Features and Benefits

• Typical off board profile of 0.5mm - ideally suited for thin

applications

• Low R

DS(ON)

– minimizes conduction

losses

• PCB footprint of 2.56mm

• 3kV ESD Protected Gate – protected against human borne

ESD

• “Lead-Free”, RoHS Compliant (Note 1)

• "Green" Device (Note 2)

Mechanical Data

• Case: X1-DFN1616-6 Type E

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Lead Free Plating (NiPdAu Finish over Copper leadframe).

• Terminals: Solderable per MIL-STD-202, Method 208

• Weight: 0.04 grams (approximate)

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DMP1245UFCL-7 P5 7 8 3,000

Notes: 1. No purposefully added lead.

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

X1-DFN1616-6

Type E

Device symbol Bottom View

Top View

Pin-Out

Pin 1

P5 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: X = 2010)

M = Month (ex: 9 = September)

Source

Gate

Protection

Diode

Gate

Drai

Summary of content (7 pages)

PAGE 1
A Product Line of Diodes Incorporated DMP1245UFCL 12V P-CHANNEL ENHANCEMENT MODE MOSFET Summary Features and Benefits ADVANCE INFORMATION V(BR)DSS RDS(on) max ID max 29mΩ @VGS = -4.5V -6.6 A 45mΩ @VGS = -2.5V -5.3 A 60mΩ @VGS = -1.8V -4.6 A 100mΩ @VGS = -1.5V -3.5 A • • • • -12V • • Mechanical Data Application • • This device provides a high performance, low RDS(ON) P channel MOSFETs in the thermally and space efficient X1-DFN1616-6 package.
PAGE 2
A Product Line of Diodes Incorporated DMP1245UFCL Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) Symbol VDSS VGSS @TA = 25°C @TA = 70°C TP = 10μs Pulsed Drain Current Thermal Characteristics Units V V Value 613 1.
PAGE 3
A Product Line of Diodes Incorporated DMP1245UFCL ADVANCE INFORMATION r(t), TRANSIENT THERMAL RESISTANCE 1 0.1 0.01 RθJA (t)=r(t) * RθJA RθJA = 205°C/W Duty Cycle, D=t1/ t2 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig.
PAGE 4
A Product Line of Diodes Incorporated DMP1245UFCL 20 20 VGS = 2.0V VGS = 1.8V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 16 VGS = 2.5V VGS = 1.5V 12 VGS = 4.5V 8 VGS = 1.2V VGS = 8.0V 12 4 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 4 Typical Output Characteristics 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.06 VGS = -1.5V 0.05 VGS = -1.8V 0.04 VGS = -2.5V 0.03 VGS = -4.5V VGS = -3.5V 0.02 0.01 0 0 4 8 12 16 ID, DRAIN-SOURCE CURRENT (A) Fig.
PAGE 5
A Product Line of Diodes Incorporated DMP1245UFCL 1.2 16 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 20 1.0 12 0.8 0.6 ID = -1mA 0.4 ID = -250µA 0.2 TA = 25°C 8 4 0 0.4 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 10 Gate Threshold Variation vs. Ambient Temperature 100,000 0.6 0.8 1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 11 Diode Forward Voltage vs.
PAGE 6
A Product Line of Diodes Incorporated DMP1245UFCL Package Outline Dimensions ADVANCE INFORMATION A1 A3 A D D2 b1 E E2 L1 L(2X) e Z(4X) b(6X) X1-DFN1616-6 Type E Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.02 A3 — — 0.13 b 0.20 0.30 0.25 b1 0.10 0.30 0.20 D 1.55 1.65 1.60 D2 0.57 0.77 0.67 E 1.55 1.65 1.60 E2 1.30 1.50 1.40 e — — 0.50 L 0.25 0.35 0.30 L1 0.52 0.72 0.62 Z — — 0.
PAGE 7
A Product Line of Diodes Incorporated DMP1245UFCL IMPORTANT NOTICE ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).