User guide

DMP1245UFCL
Document number: DS35505 Rev. 1 - 2
3 of 7
www.diodes.com
November 2011
© Diodes Incorporated
DMP1245UFCL
ADVANCE INFORMATION
A Product Line o
f
Diodes Incorporated
0.001
0.01
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIMES (sec)
Fig. 03 Transient Thermal Resistance
R(t)=r(t) * R
θθ JA JA
R = 205°C/W
Duty Cycle, D=t1/ t2
θ JA
r(t), TRANSIENT THERMAL RESISTANCE
1
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-12
⎯ ⎯
V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
⎯ ⎯
-1 µA
V
DS
= -12.0V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯ ⎯
±10
µA
V
GS
= ±8.0V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS
(
th
)
-0.3 -0.6 -0.95 V
V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
25 29
m
V
GS
= -4.5V, I
D
= - 4A
⎯
31 45
V
GS
= -2.5V, I
D
= - 3.5A
⎯
40 60
V
GS
= -1.8V, I
D
= - 1A
⎯
60 100
V
GS
= -1.5 V, I
D
= - 0.5A
Forward Transfer Admittance
|Y
fs
|
0.4 3 - S
V
DS
= -5V, I
D
= -2A
Diode Forward Voltage
V
SD
- - -1.0 V
V
GS
= 0V, I
D
= -2A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
- 1357.4 -
pF
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
- 499 -
pF
Reverse Transfer Capacitance
C
rss
- 273.6 -
pF
Gate Resistance
R
g
- 14.26 -

V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Q
g
- 16.1 -
nC
V
GS
= -4.5V
I
D
= -1A,
V
DS
= -10V
- 26.1 - nC
V
GS
= -8V
Gate-Source Charge
Q
g
s
- 1.71 -
nC
Gate-Drain Charge
Q
g
d
- 20.48 -
nC
Turn-On Delay Time
t
D
(
on
)
- 15.2 -
ns
V
GS
= -2.5V, V
DS
= -10V
I
D
= -180mA, R
G
= 2.0,
Turn-On Rise Time
t
r
- 33.11 -
ns
Turn-Off Delay Time
t
D
(
off
)
- 219.4 -
ns
Turn-Off Fall Time
t
f
- 217.64 -
ns
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.