User guide

DMP1245UFCL
Document number: DS35505 Rev. 1 - 2
5 of 7
www.diodes.com
November 2011
© Diodes Incorporated
DMP1245UFCL
ADVANCE INFORMATION
A Product Line o
f
Diodes Incorporated
T , AMBIENT TEMPERATURE (°C)
A
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(TH)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-50 -25 0 25 50 75 100 125 150
I = -250µA
D
I = -1mA
D
Fig. 11 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
I, S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
T = 25°C
A
0
4
8
12
16
20
0.4 0.6 0.8 1 1.2
Fig. 12 Typical Drain-Source Leakage Current vs. Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
I, LEAKA
G
E
C
U
R
R
EN
T
(nA)
DSS
1
10
100
1,000
10,000
100,000
024 681012
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
048121620
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 13 Typical Junction Capacitance
C , JUNCTION CAPACITANCE (pF)
T
0
500
1,000
1,500
2,000
2,500
C
ISS
C
OSS
C
RSS
Fig. 14 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
V , GATE-SOURCE VOLTAGE (V)
GS
V = -10V
I = -1A
DS
D
0
2
4
6
8
0 5 10 15 20 25 30