Instruction Manual
DMP2033UCB9
Document number: DS35904 Rev. 3 - 2
2 of 6
www.diodes.com
June 2012
© Diodes Incorporated
DMP2033UCB9
NEW PRODUCT
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
-6 V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
-4.2A
-3.3A
A
Continuous Drain Current (Note 6) V
GS
= -4.5V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
-5.8A
-4.5A
A
Pulsed Drain Current
I
DM
-30 A
Thermal Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
P
D
1.0 W
Total Power Dissipation (Note 6)
P
D
1.8 W
Thermal Resistance, Junction to Ambient (Note 5)
R
θ
JA
126.8 °C/W
Thermal Resistance, Junction to Ambient (Note 6)
R
θ
JA
69 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-20 - - V
V
GS
= 0V, I
D
= -250A
Gate-Source Breakdown Voltage
BV
GSS
-6.1 - - V
I
GS
= -250A, V
DS
= 0V
Zero Gate Voltage Drain Current @T
c
= 25°C I
DSS
- - -1 A
V
DS
= -16V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- - -100 nA
V
GS
= -6V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
(
th
)
-0.4 -0.6 -1.1 V
V
DS
= V
GS
, I
D
= -250A
Static Drain-Source On-Resistance
R
DS (ON)
-
28 33
mΩ
V
GS
= -4.5V, I
D
= -2A
35 45
V
GS
= -2.5V, I
D
= -2A
45 65
V
GS
= -1.8V, I
D
= -2A
Forward Transfer Admittance
|Y
fs
|
- 10.8 - S
V
DS
= -10V, I
D
= -2A
Diode Forward Voltage (Note 6)
V
SD
- -0.7 -1 V
V
GS
= 0V, I
S
= -2A
Reverse Recovery Charge
Q
r
r
-
15
- nC
V
dd
= -9.5V, I
F
= -2A,
di/dt = 200A/s
Reverse Recovery Time
t
r
r
-
25
- ns
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 382 500 pF
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 204 270 pF
Reverse Transfer Capacitance
C
rss
- 86 115 pF
Series Gate Resistance
R
G
26.1 35
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (4.5V)
Q
g
- 5.4 7.0 nC
V
GS
= -4.5V, V
DS
= -10V,
I
D
= -2A
Gate-Source Charge
Q
g
s
- 0.7 - nC
Gate-Drain Charge
Q
g
d
- 1.5 - nC
Turn-On Delay Time
t
D
(
on
)
- 8.5 - ns
V
DD
= -10V, V
GS
= -4.5V,
I
DS
= -2A, R
G
= 2,
Turn-On Rise Time
t
r
- 11.8 - ns
Turn-Off Delay Time
t
D
(
off
)
- 47 - ns
Turn-Off Fall Time
t
f
- 56 - ns
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Device mounted on FR4 material with 1-inch
2
(6.45-cm
2
), 2-oz. (0.071-mm thick) Cu
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.