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DMP2039UFDE4

Document number: DS35675 Rev. 3 - 2

1 of 6

www.diodes.com

March 2012

DMP2039UFDE4

25V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(on) max

= 25°C

-25V

26mΩ @ V

= -4.5V

-7.3

40mΩ @ V

= -1.8V

-6.0

Description and Applications

This new generation MOSFET has been designed to minimize the on-

state resistance (R

DS(on)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

• Load Switching

• Battery Management Application

• Power Management Functions

Features and Benefits

• Low R

DS(ON)

– ensures on state losses are minimized

• 0.4mm profile – ideal for low profile applications

• PCB footprint of 4mm

• Low Input Capacitance

• ESD Protected Gate

• Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X2-DFN2020-6

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.006 grams (approximate)

Ordering Information (Note 3)

Part Number Case Packaging

DMP2039UFDE4-7 X2-DFN2020-6 3,000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

X2-DFN2020-6

Bottom View Equivalent Circuit

Source

Gate

Protection

Diode

Gate

Drain

ESD PROTECTED

Bottom View

Internal Schematic

Top View

PD = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: Y = 2011)

M = Month (ex: 9 = September)

Dot Denotes Pin 1

Summary of content (6 pages)

PAGE 1
DMP2039UFDE4 25V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits ID RDS(on) max TA = 25°C 26mΩ @ VGS = -4.5V -7.3 40mΩ @ VGS = -1.8V -6.0 -25V • Low RDS(ON) – ensures on state losses are minimized • • • • • • • 0.
PAGE 2
DMP2039UFDE4 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -4.5V TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C Steady State t<5s Continuous Drain Current (Note 5) VGS = -1.8V Steady State t<5s ID -9.2 -7.3 A ID -6.0 -4.7 A Units V V A -7.6 -6.0 -60 -2.
PAGE 3
DMP2039UFDE4 20 20 VGS = 8.0V VGS = 4.5V VGS = 2.0V 12 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 16 VGS = 1.5V VGS = 1.8V 8 4 0 10 5 TA = 150°C 0 TA = 125°C 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics 0.06 0.05 0.04 0.03 0.02 0.01 0 1 2 3 4 5 6 7 8 -ID, DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 9 0 10 RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.5 1.3 1.1 0.9 0.7 0.
PAGE 4
DMP2039UFDE4 20 18 1.2 16 -IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE(V) 1.4 1.0 0.8 0.6 0.4 14 12 10 8 6 4 0.2 2 0 -50 0 0.4 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs.
PAGE 5
DMP2039UFDE4 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 R θJA(t) = r(t) * R θJA R θJA = 178°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 13 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions A1 A3 A D e L D2 E E2 L1 Z(3X) DMP2039UFDE4 Document number: DS35675 Rev. 3 - 2 e X2-DFN2020-6 Dim Min Max Typ A 0.
PAGE 6
DMP2039UFDE4 Suggested Pad Layout X2 X1 Y Dimensions Y3 Y2 Y1 X (6x) C X X1 X2 Y Y1 Y2 Y3 Value (in mm) 0.650 0.400 1.050 1.700 0.500 1.600 1.600 2.300 C IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).