Owner's manual

DMP2039UFDE4
Document number: DS35675 Rev. 3 - 2
4 of 6
www.diodes.com
March 2012
© Diodes Incorporated
DMP2039UFDE4
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
ATE T
H
R
ES
H
O
LD V
O
LTA
G
E(V)
GS(TH)
0
2
4
6
8
10
12
14
16
18
20
0.4 0.6 0.8 1.0 1.2
-V , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
SD
-I , S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
0 5 10 15 20
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
DS
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
AN
C
E (p
F
)
T
C
oss
C
rss
C
iss
f = 1MHz
0 5 10 15 20 25
1
10
100
1,000
100,000
-I , LEAKA
G
E
C
U
R
R
EN
T
(nA)
DSS
10,000
-V , DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
0 5 10 15 20 25 30 35 40 45 50
0
2
4
6
8
-V ,
G
A
T
E-S
O
U
R
C
E V
O
L
T
A
G
E (V)
GS
Q , TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
g
0.01 0.1 1 10 100
0.1
1
10
100
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
0.01
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
DS
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10s
W
µ
T = 150°C
T = 25°C
J(max)
A
V = -8V
Single Pulse
GS
DUT on 1 * MRP Board