User guide

DMP2047UCB4
Document number: DS36154 Rev. 5 - 2
4 of 6
www.diodes.com
October 2013
© Diodes Incorporated
DMP2047UCB4
0.2
0.4
0.6
0.8
1.0
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
ATE T
H
R
ES
H
O
LD V
O
LTA
G
E (V)
GS(TH)
-I = 1mA
D
-I = 250µA
D
0
2
4
6
8
0 0.3 0.6 0.9 1.2 1.5
10
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
SD
-I , S
O
U
R
C
E
C
U
R
R
E
N
T
(A)
S
T= 25C
A

T= -55C
A

T= 85C
A

T= 125C
A

T= 150C
A

1000
100
10
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
DS
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
A
N
C
E (p
F
)
T
0 2 4 6 8 10 12 14 16 18 20
C
oss
C
rss
f = 1MHz
C
iss
10000
1
10
123456
1
0.1
-V , GATE-SOURCE VOLTAGE (V)
Figure 10 Typical Gate-Source Leakage Current vs. Voltage
GS
-I , LEAKA
G
E
C
U
R
R
E
N
T
(nA)
GSS
100
0.01
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0
0.5
1
1.5
2
4
4.5
Q , TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
g
-V ,
G
A
T
E-S
O
U
R
C
E V
O
L
T
A
G
E (V)
GS
0 0.5 1 1.5 2 2.5
3
3.5
2.5
V= -10V
I= -1A
DS
D
100
0.1 1 10 100
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
T = 150°C
T = 25°C
Single Pulse
DUT on 1*MRP board
V= -6V
J(max)
A
GS
R
Limited
DS(on)
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
10
0.1
0.01
1