Instruction Manual
DMP2066LDM
Document number: DS31464 Rev. 4 - 2
2 of 5
www.diodes.com
December 2011
© Diodes Incorporated
DMP2066LDM
NEW PRODUCT
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±12
V
Drain Current (Note 4) Continuous T
A
= 25°C
T
A
= 70°C
I
D
-4.6
-3.7
A
Pulsed Drain Current (Note 5)
I
DM
-18 A
Body-Diode Continuous Current (Note 4)
I
S
2.0 A
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 4)
P
D
1.25 W
Thermal Resistance, Junction to Ambient (Note 4); Steady-State
R
θ
JA
100
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BV
DSS
-20
⎯ ⎯
V
I
D
= -250μA, V
GS
= 0V
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
⎯ ⎯
-1
μA
V
DS
= -20V, V
GS
= 0V
Gate-Body Leakage Current
I
GSS
⎯ ⎯
±100
nA
V
DS
= 0V, V
GS
= ±12V
Gate Threshold Voltage
V
GS
(
th
)
-0.6 -0.96 -1.2 V
V
DS
= V
GS
, I
D
= -250μA
On State Drain Current (Note 6)
I
D
(
ON
)
-15
⎯ ⎯
A
V
GS
= -4.5V, V
DS
= -5V
Static Drain-Source On-Resistance (Note 6)
R
DS (ON)
⎯
29
55
40
70
mΩ
V
GS
= -4.5V, I
D
= -4.6A
V
GS
= -2.5V, I
D
= -3.8A
Forward Transconductance (Note 6)
g
FS
⎯
9
⎯
S
V
DS
= -10V, I
D
= -4.6A
Diode Forward Voltage (Note 6)
V
SD
-0.5 -0.72 -1.4 V
I
S
= -2.1A, V
GS
= 0V
Maximum Body-Diode Continuous Current (Note 4)
I
S
⎯ ⎯
1.7 A
⎯
DYNAMIC PARAMETERS (Note 7)
Input Capacitance
C
iss
⎯
820
⎯
pF
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
200
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
160
⎯
pF
Gate Resistance
R
G
⎯
2.5
⎯ Ω
V
DS
= 0V, V
GS
= 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
G
⎯
10.1
⎯
nC
V
DS
= -10V, V
GS
= -4.5V,
I
D
= -4.5A
Gate-Source Charge
Q
GS
⎯
1.5
⎯
Gate-Drain Charge
Q
GD
⎯
4.3
⎯
Turn-On Delay Time
t
d
(
on
)
⎯
4.4
⎯
ns
V
DS
= -10V, V
GS
= -4.5V,
I
D
= -1A, R
G
= 6.0Ω
Rise Time
t
r
⎯
9.9
⎯
Turn-Off Delay Time
t
d
(
off
)
⎯
28.0
⎯
Fall Time
t
f
⎯
23.4
⎯
Notes: 4. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s.
5. Repetitive Rating, pulse width limited by junction temperature.
6. Test pulse width t = 300μs.
7. Guaranteed by design. Not subject to production testing.