Manual

DMP2066LSD
Document number: DS31453 Rev. 4 - 2
2 of 5
www.diodes.com
January 2014
© Diodes Incorporated
DMP2066LSD
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±12
V
Drain Current (Note 5) Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-5.8
-4.6
A
Pulsed Drain Current (Note 6)
I
DM
-20 A
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5)
P
D
2.0 W
Thermal Resistance, Junction to Ambient (Note 5)
R
θ
JA
62.5 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-20
V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS
-1 µA
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
±100
nA
V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.6 -0.94 -1.2 V
V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance
R
DS (ON)
29
55
40
70
mΩ
V
GS
= -4.5V, I
D
= -4.6A
V
GS
= -2.5V, I
D
= -3.8A
Forward Transconductance
g
fs
9
S
V
DS
= -10V, I
D
= -4.6A
Diode Forward Voltage (Note 7)
V
SD
-0.5 -0.72 -1.4 V
V
GS
= 0V, I
S
= -2.1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
820
pF
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
200
pF
Reverse Transfer Capacitance
C
rss
160
pF
Gate Resistance
R
G
2.5
Ω
V
DS
= 0V, V
GS
= 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
G
10.1
nC
V
DS
= -10V, V
GS
= -4.5V,
I
D
= -5.9A
Gate-Source Charge
Q
GS
1.5
Gate-Drain Charge
Q
GD
4.3
Turn-On Delay Time
t
d(on)
4.4
ns
V
DS
= -10V, V
GS
= -4.5V,
I
D
= -1A, R
G
= 6.0Ω
Rise Time
t
r
9.9
Turn-Off Delay Time
t
d(off)
28.0
Fall Time
t
f
23.4
Notes: 5. Device mounted on 2 oz. 1” x 1” Copper pads on 2” x 2” FR-4 PCB.
6. Pulse width 10μS, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.