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DMP2070UCB6

Document number: DS35553 Rev. 2 - 2

1 of 6

www.diodes.com

October 2011

DMP2070UCB6

NEW PRODUCT

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(ON)

= 25°C

-20V

70m @ V

= -4.5V

3.5 A

90m @ V

= -2.5V

3.0 A

Description and Applications

This new generation MOSFET has been designed to minimize the on-

state resistance (R

DS(on)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

• Battery Management

• Load Switch

• Battery Protection

Features and Benefits

• Low Q

& Q

• Small Footprint

• Low Profile 0.62mm height

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device Halogen and Antimony Free (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: U-WLB1510-6

• Terminal Connections: See Diagram Below

• Weight: 0.0018 grams (approximate)

Ordering Information (Note 3)

Part Number Case Packaging

DMP2070UCB6-7 U-WLB1510-6 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

U-WLB1510-6

2W = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: Y = 2011)

M = Month (ex: 9 = September)

Top View

Summary of content (6 pages)

PAGE 1
DMP2070UCB6 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) ID TA = 25°C 70mΩ @ VGS = -4.5V 3.5 A 90mΩ @ VGS = -2.5V 3.0 A V(BR)DSS • • • • • • -20V Low Qg & Qgd Small Footprint Low Profile 0.
PAGE 2
DMP2070UCB6 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) VGS = -4.5V Steady State Continuous Drain Current (Note 5) VGS = -4.5V Steady State TA = 25°C TA = 70°C TA = 25°C TA = 70°C Value -20 ±8 -2.5 -2.0 ID -3.5 -2.8 -12 -1.
PAGE 3
DMP2070UCB6 10 10 VGS = -4.5V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VDS = -5.0V 8 VGS = -2.5V VGS = -2.0V 6 VGS = -1.8V VGS = -1.5V 4 2 6 4 2 T A = 150°C VGS = -1.2V T A = 125°C 0 0 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics 5 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0 1 2 3 4 5 6 7 8 -ID, DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 9 1.3 1.1 0.9 0.7 0.
PAGE 4
DMP2070UCB6 8 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE(V) 10 1.2 1.0 0.8 0.6 0.4 6 4 2 0.2 0 -50 0 0.4 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature -25 1,000 0.6 0.8 1.0 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 1,000 -IDSS, LEAKAGE CURRENT (nA) CT, JUNCTION CAPACITANCE (pF) TA = 150°C Ciss 100 Coss Crss 100 0 5 10 15 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig.
PAGE 5
DMP2070UCB6 D = 0.7 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1 D = 0.5 D = 0.3 D = 0.9 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t) = r(t) * RθJA RθJA = 84°C/W Duty Cycle, D = t1/ t2 D = 0.005 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 13 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions Øb (x6) D e E e e A3 A2 U-WLB1510-6 Dim Min Max Typ D 0.90 1.00 1.00 E 1.40 1.50 1.50 A 0.62 − − A2 0.38 − − A3 0.020 0.030 0.
PAGE 6
DMP2070UCB6 NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).