Owner manual

DMP2130LDM
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BV
DSS
-20
⎯ ⎯
V
I
D
= -250μA, V
GS
= 0V
I
DSS
⎯ ⎯
-1
μA
V
DS
= -20V, V
GS
= 0V Zero Gate Voltage Drain Current T
J
= 25°C
Gate-Body Leakage Current
I
GSS
⎯ ⎯
±100
nA
V
DS
= 0V, V
GS
= ±12V
Gate Threshold Voltage
V
GS(th)
-0.6
⎯
-1.25 V
V
DS
= V
GS
, I
D
= -250μA
NEW PRODUCT
On State Drain Current (Note 5)
I
D (ON)
-15
⎯ ⎯
A
V
GS
= -4.5V, V
DS
= -5V
R
DS (ON)
⎯
51
82
94
80
110
130
mΩ
V
GS
= -4.5V, I
D
= -4.5A
V
GS
= -2.7V, I
D
= -3.8A
V
GS
= -2.5V, I
D
= -3.7A
Static Drain-Source On-Resistance (Note 5)
Forward Transconductance (Note 5)
g
FS
⎯
6.3
⎯
S
V
DS
= -10V, I
D
= -4.5A
Diode Forward Voltage (Note 5)
V
SD
⎯
0.79 -1.26 V
I
S
= -1.7A, V
GS
= 0V
Maximum Body-Diode Continuous Current (Note 1)
I
S
⎯ ⎯
1.7 A
⎯
DYNAMIC PARAMETERS (Note 6)
Total Gate Charge
Q
g
⎯
7.3
⎯
nC
V
GS
= -4.5V, V
DS
= -10V, I
D
= 4.5A
Gate-Source Charge
Q
gs
⎯
2.0
⎯
nC
V
GS
= -4.5V, V
DS
= -10V, I
D
= 4.5A
Gate-Drain Charge
Q
gd
⎯
1.9
⎯
nC
V
GS
= -4.5V, V
DS
= -10V, I
D
= 4.5A
Turn-On Delay Time
t
D(on)
⎯
12
⎯
ns
Turn-On Rise Time
t
r
⎯
20
⎯
ns
DMP2130LDM
Document number: DS31118 Rev. 6 - 2
2 of 4
www.diodes.com
May 2008
© Diodes Incorporated
Turn-Off Delay Time
t
D(off)
⎯
38
⎯
ns
t
f
⎯
41
⎯
ns
V
DS
= -10V, V
GS
= -4.5V,
R
L
= 10Ω, R
G
= 6Ω
Turn-Off Fall Time
Input Capacitance
C
iss
⎯
443
⎯
pF
Output Capacitance
C
oss
⎯
125
⎯
pF
C
rss
⎯
98
⎯
pF
V
DS
= -16V, V
GS
= 0V
f = 1.0MHz
Reverse Transfer Capacitance
Notes: 5. Test pulse width t = 300μs.
6. Guaranteed by design. Not subject to production testing.
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
-V , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
GS
V = -5V
Pulsed
DS