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DMP21D0UFB4

atasheet number: DS35279 Rev. 3 - 2

1 of 7

www.diodes.com

February 2012

DMP21D0UFB4

Product Line o

Diodes Incorporated

20V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(on)

@ T

= 25°C

-20V

495mΩ @ V

= -4.5V

-0.77A

690mΩ @ V

= -2.5V

-0.67A

960mΩ @ V

= -1.8V

-0.57A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

DS(on)

) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

• Portable electronics

Features and Benefits

• Footprint of just 0.6mm

– thirteen times smaller than SOT23

• 0.4mm profile – ideal for low profile applications

• Low Gate Threshold Voltage

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

• ESD Protected Gate 3KV

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X2-DFN1006-3

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Ordering Information (Note 3)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DMP21D0UFB4-7B NO 7 8 10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

X2-DFN1006-3

Equivalent Circuit

Top View

Internal Schematic

Bottom View

Source

Gate

Protection

Diode

Gate

Drain

NO = Product Type Marking Code

DMP21D0UFB4-7B

Top View

Bar Denotes Gate

and Source Side

ESD PROTECTED TO 3kV

Summary of content (7 pages)

PAGE 1
A Product Line of Diodes Incorporated DMP21D0UFB4 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -20V Features and Benefits RDS(on) ID @ TA = 25°C 495mΩ @ VGS = -4.5V -0.77A 690mΩ @ VGS = -2.5V -0.67A 960mΩ @ VGS = -1.8V -0.57A 2 Footprint of just 0.6mm – thirteen times smaller than SOT23 0.4mm profile – ideal for low profile applications Low Gate Threshold Voltage Fast Switching Speed Totally Lead-Free & Fully RoHS compliant (Note 1) Halogen and Antimony Free.
PAGE 2
A Product Line of Diodes Incorporated DMP21D0UFB4 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Pulsed Drain Current (Note 6) Thermal Characteristics Value -20 ±8 Unit V V ID -0.77 -0.55 -1.17 A IDM -5.0 A Value 0.43 0.
PAGE 3
A Product Line of Diodes Incorporated DMP21D0UFB4 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 - - -1 ±10 V μA μA VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) - -0.
PAGE 4
A Product Line of Diodes Incorporated 1.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMP21D0UFB4 0.9 0.8 0.7 0.6 VGS = -1.8V 0.5 0.4 VGS = -2.5V 0.3 VGS = -4.5V 0.2 0.1 0 0 0.4 0.8 1.2 1.6 -ID, DRAIN-SOURCE CURRENT (A) Fig. 5 Typical On-Resistance vs. Drain Current and Gate Voltage 2.0 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.7 1.5 1.3 1.1 VGS = -5.0V ID = -500mA 0.9 VGS = -2.5V ID = -250mA 0.7 0.
PAGE 5
A Product Line of Diodes Incorporated DMP21D0UFB4 100,000 IGSS, LEAKAGE CURRENT (nA) -IDSS, LEAKAGE CURRENT (nA) 10,000 1,000 TA = 150°C TA = 125°C 100 T A = 85°C 10 10,000 TA = 25°C 1 0 TA = 125°C 1,000 100 8 12 16 20 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 Typical Leakage Current vs. Drain-Source Voltage T A = 85°C T A = 25°C 10 TA = -55°C 1 0.1 0 4 T A = 150°C 2 4 6 8 VGS, GATE-SOURCE VOLTAGE (V) Fig.12 Leakage Current vs.
PAGE 6
A Product Line of Diodes Incorporated DMP21D0UFB4 Package Outline Dimensions A A1 D b1 E e b2 L2 L3 X2-DFN1006-3 Dim Min Max Typ A 0.40 ⎯ ⎯ A1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.05 1.00 E 0.55 0.65 0.60 e 0.35 ⎯ ⎯ L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 ⎯ ⎯ All Dimensions in mm L1 Suggested Pad Layout C Dimensions Z G1 G2 X X1 Y C X1 X G2 G1 Y Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Z DMP21D0UFB4 Datasheet number: DS35279 Rev. 3 - 2 6 of 7 www.diodes.
PAGE 7
A Product Line of Diodes Incorporated DMP21D0UFB4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).