User guide

DMP21D0UFB4
D
atasheet number: DS35279 Rev. 3 - 2
5 of 7
www.diodes.com
February 2012
© Diodes Incorporated
DMP21D0UFB4
A
Product Line o
f
Diodes Incorporated
1
10
100
1,000
10,000
04 8121620
-I , LEAKA
G
E
C
U
R
R
EN
T
(nA)
DSS
Fig. 11 Typical Leakage Current vs. Drain-Source Voltage
-V , DRAIN-SOURCE VOLTAGE (V)
DS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
02468
V , GATE-SOURCE VOLTAGE (V)
GS
Fig.12 Leakage Current vs. Gate-Source Voltage
0.1
1
10
100
1,000
10,000
100,000
I , LEAKA
G
E
C
U
R
R
E
N
T
(nA)
GSS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
0.1
1
10
100
1,000
10,000
100,000
02468
V , GATE-SOURCE VOLTAGE (V)
GS
Fig.13 Leakage Current vs. Gate-Source Voltage
I, LEAKA
G
E
C
U
R
R
E
N
T
(nA)
GSS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
0 2 4 6 8 101214161820
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 14 Typical Junction Capacitance
DS
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
AN
C
E (p
F
)
T
C
oss
C
rss
f = 1MHz
C
iss
0
1
2
3
4
5
6
7
8
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
-V ,
G
A
T
E-S
O
U
R
C
E V
O
L
T
A
G
E (V)
GS
Q , TOTAL GATE CHARGE (nC)
Fig. 15 Gate-Charge Characteristics
g